Mitsubishi Materials Silicon Corporation

Kabushikikaisha Raifu

Jun Furukawa

Makoto Furukawa

Ryuki Sato

Hideo Tanaka

Takao Fujikawa

Yoshinobu Nakada

Hisashi Furuya

Takaaki Shiota

Yoshihisa Nonogaki

Tetsuya Nakai

Etsuro Morita

Hiroshi Koya

Takuya Masui

Yuji Nakata

Mitsuru Sudou

An intraoral moisture measuring device includes: a swing member that swings with respect to a main body about a predetermined swing center; a moisture amount detection unit provided at a tip of the swing member, for detecting a moisture amount by being directly or indirectly abutted against a measurement site in a mouth; and a biasing member for biasing the swing member in one of swing directions. Consequently, the intraoral moisture measuring device is capable of measuring intraoral moisture in a simple and highly-accurate manner.

Intraoral moisture measuring device

An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm /minute &deg; C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (&deg; C./mm) is and axial temperature gradient at the center of the ingot and Gb (&deg; C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300&deg; C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050&deg; C. to 1,220&deg; C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.

Silicon wafer, and manufacturing method and heat treatment method of the same

A hot isostatic pressing treatment is conducted for a single crystal body ( ) in an atmosphere where the single crystal body ( ) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body ( ), for 5 minutes to 20 hours; and the single crystal body ( ) is annealed. It is preferable that the atmosphere where the single crystal body ( ) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body ( ) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body ( ), irrespectively of the size of the single crystal body ( ).

Method of removing defects of single crystal material and single crystal material from which defects are removed by the method

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Saitama, Japan

Jun Furukawa