Mitsubishi Electric Corporation

3m Innovative Properties Company

Mitsubishi Heavy Industries Limited

Other

Mitsubishi Denki Kabushiki Kaisha

Chugai Seiyaku Kabushiki Kaisha

Keio University

Tcm Corporation

Massachusetts Institute of Technology

Ebara Jitsugyo Co., Ltd.

Heartseed Inc.

Jun Fujita

Motoru Yoshida

Atsushi Kamiyoshi

Yoshinori Yokoyama

Kazuyo Endo

Yuji Sato

Takashi Yamasaki

Akira Inoue

Shigehisa Hagura

Kazuhiko Hiraoka

Junichi Murakami

Yoshitsugu Yamamoto

Keiichi Fukuda

Yosuke Nakata

Yorinobu Takamatsu

Kazuyasu Nishikawa

Yoichi Nogami

Shinnosuke Soda

Yuji Hiroshige

Koji Shiizaki

Norihisa Watanabe

Toshihiko Terashima

Osafumi Nakajima

Munehito Adachi

Sawako Kojima

Yoshifumi Isozaki

Albert I Everaerts

William M Lamanna

Catherine A Leatherdale

Fred Boyle McCormick

Tatsuo Fukushi

Haruhiko Harry Asada

Hidekazu Tanaka

Kazuyuki Sugahara

Toshiaki Shinohara

Takeshi Saito

Atsushi Sugitatsu

Hiroshi Kobayashi

Vivek Bharti

Tatsuo Hatta

Dylan T Cosgrove

Kohichiro Kawate

Takeshi Yamamoto

Fay T Salmon

Naoto Kaguchi

Fumio Wada

Daisuke Echizenya

Zachary J Thompson

Aritomo Uemura

Shinsuke Miyamoto

Shih-Hung Chou

Hiroaki Okabe

Shigehisa Suzuki

Shigeyoshi Ishii

Hideki Minami

Naoyuki Toriumi

Tsuneo Hamaguchi

Takahiro Ohta

Yasumi Nagura

Tsukasa Matsuura

Hironori Onitsuka

Haruhiko Miyazawa

Takumi Kinoshita

Atsushi Toyota

Shogo Miyata

Hideaki Kanazawa

Manabu Uchizawa

Anirban Mazumdar

Yoshihiko Tasaka

Sotaro Endo

Serena L Mollenhauer

Yoshimi Yabugaki

Norimasa Mori

Kyoichi Yoshioka

Michio Ohira

Hideo Nakata

Shuichi Takahashi

Hironori Hirakawa

Shugo Tohyama

Masahiro Takatsuji

Yoshinori Mochida

Ian C Rust

Yoshimasa Tukamoto

Takahiro Kasahara

Nami Kobori

Hidekl Minami

Shogo Sasaki

Kanehisa Hattori

Yoshihiro Watanabe

Mitsuru Handa

Tomoo Takayama

Yoshikatsu Takeda

Yoshihiro Tamura

Fred B Mccormick

Tamon Tadera

An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surface of the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Semiconductor package and semiconductor device

A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.

Power semiconductor module and power conversion apparatus

An object is to provide technology that enables cost reduction or downsizing of semiconductor packages. The wiring element includes a second substrate, a plurality of first relay pads arranged on a surface of the second substrate opposite to the conductor substrate and connected to each of the control pads of the plurality of semiconductor elements by wires, a plurality of second relay pads arranged on the surface of the second substrate opposite to the conductor substrate, the number thereof being equal to or lower than the number of the plurality of first relay pads, and a plurality of wiring portions arranged on the surfaceof the second substrate opposite to the conductor substrate and selectively connecting the plurality of first relay pads and the plurality of second relay pads.

Semiconductor package and production method thereof, and semiconductor device

A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Semiconductor device, power conversion device, and method for manufacturing semiconductor device

Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

Semiconductor device, method for manufacturing the same, and semiconductor module

An object is to provide a technique capable of suppressing a corrosion of a first electrode and a second electrode. A semiconductor element includes a semiconductor substrate, an Al electrode, a polyimide member selectively disposed on the Al electrode, and an Ni electrode. The polyimide member includes a protruding part which protrudes in a plane direction of an upper surface of the Al electrode and which has a lower portion having contact with the Al electrode in a cross-sectional view, in at least part of a peripheral part of the polyimide member in a top view. The Ni electrode is disposed on the Al electrode and the protruding part.

Semiconductor element, semiconductor device, power conversion device, and method of manufacturing semiconductor element

The invention provides a method for producing a substrate for supporting cells, including a humidification step of humidifying the periphery of a non-fluorine resin based substrate, and a UV irradiation step of irradiating the substrate with UV in an oxygen and/or ozone containing atmosphere during and/or after the humidification step. The invention also provides a substrate for supporting cells, which is a non-fluorine resin based substrate. The substrate has a cell supporting surface for supporting cells, containing a component capable of generating CHOmolecules by beam irradiation of a time-of-flight secondary ion mass spectrometer, such that cells are supported on the cell-supporting surface.

Substrate for supporting cells and method for producing same

Electronic Devices Incorporating Flexible Component Layers with Interlocking Devices At least some aspects of the present disclosure directs to an electronic devicecomprising a rigid memberA,B, a flexible component layer, and an interlocking deviceA, HOB disposed between the flexible component layer and the rigid member. The flexible component layer has at least two sections when the flexible component layer is flexed. The interlocking device comprises a first interlocking component attached to or integrated with the flexible component layer, and a second interlocking component attached to or integrated with the rigid member configured to engage with the first interlocking component, such that the engagement prevents the separation of the flexible component layer from the rigid member along a direction generally perpendicular to a surface of the rigid member.

Electronic devices incorporating flexible component layers with interlocking devices

A takeoff and landing assist apparatus for a flight vehicle with rotor blades causes the flight vehicle to take off from or be landed on a target point. The takeoff and landing assist apparatus includes a plurality of guide rods in parallel to each other, the plurality of guide rods being provided to one of the flight vehicle and the target point; and a plurality of guide rings into which the plurality of guide rods are insertable, the plurality of guide rings being provided to the other of the flight vehicle and the target point. A center-to-center distance between the plurality of guide rods and a center-to-center distance between the plurality of guide rings are set to be same.

Takeoff and landing assist apparatus for flight vehicle, and flight device

A semiconductor device having high reliability is obtained. A semiconductor device includes a semiconductor substrate, a first gate interconnection, a second gate interconnection, a first metal portion, an insulating member, and a second metal portion. The first gate interconnection and the second gate interconnection are disposed on a main surface of the semiconductor substrate with an interval therebetween. The first metal portion is formed on the first gate interconnection and the second gate interconnection. The first metal portion has a top surface located opposite to the semiconductor substrate at a region between the first gate interconnection and the second gate interconnection. A recess is formed in the top surface. The insulating member fills at least a portion of the recess. The second metal portion extends from an upper surface of the insulating member onto the top surface of the first metal portion.

Semiconductor device

A method of forming Cu plating of the present invention includes: a first step of forming a Cu seed layer on one of surfaces of a substrate such that an average grain size is 50 nm or more and 300 nm or less; a second step of forming an oxide film on a surface of the Cu seed layer in an oxygen atmosphere; a third step of removing a part of the oxide film; and a fourth step of feeding power to the Cu seed layer to form Cu plating on a surface of the oxide film on the Cu seed layer by electrolytic plating.

Method of forming Cu plating, method of manufacturing Cu-plated substrate, and Cu-plated substrate

There is provided an aqueous emulsion derived from a blend comprising an acrylic polymer, wherein the pH of the dispersion medium is less than 7.0, and a water-in-oil emulsion containing a nonionic water-soluble polymer, which aqueous emulsion has viscosity of 1,000 to 15,000 mPa s at 25&#xb0; C. There are also provided adhesive compositions made using the aqueous emulsion and methods for manufacturing the aqueous emulsion.

Aqueous emulsion, adhesive composition, and aqueous emulsion manufacturing method

A semiconductor device includes a semiconductor substrate, an insulating film, and an electrode. The semiconductor substrate includes a first surface. The insulating film is provided on the first surface of the semiconductor substrate and includes a second surface opposite to the first surface. The electrode is connected to the second surface of the insulating film and includes a side surface, a first face in contact with the insulating film, and a second face opposite to the first face. An outer periphery of the second face of the electrode is formed on an inner side of an outer periphery of the first face.

Semiconductor device and method of manufacturing semiconductor device

An inspection robot for inspecting a nuclear reactor that includes a hull and an on-board control mechanism that controls the operation of the inspection robot. The on-board control mechanism controls one or more sensors used to inspect one or more structures in the nuclear reactor as well as the movement by the inspection robot. A gimbal mechanism rotates the inspection robot hull by shifting the center-of-mass so that gravity and buoyancy forces generate a moment to rotate the hull in a desired direction. A camera is coupled to the gimbal mechanism for providing visual display of the one or more structures in the nuclear reactor. The camera is allowed to rotate about an axis using the gimbal mechanism. The inspection robot communicates its findings with respect to the inspection tasks using the wireless communication link.

Apparatus and method of wireless underwater inspection robot for nuclear power plants

Described herein is a composition, article and method thereof, wherein the composition comprises (i) a fluoropolymer and (ii) an ionic liquid.

Fluoropolymer blend and articles thereof

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Tokyo, Japan

Jun Fujita