Mitsubishi Materials Corporation

Stmicroelectronics(tours) Sas

Stmicroelectronics (rousset) Sas

Jun Fujii

Hideaki Sakurai

Nobuyuki Soyama

Takashi Noguchi

A ferroelectric film a plurality of fired films is provided. E each of the plurality of fired films is made of metal oxide in a perovskite structure including Pb, Zr, and Ti, a total content of Li, Na, and K in the each of the plurality of fired films is 3 mass ppm or less, and the total content of Li, Na, and K on one surface of each of the plurality of fired films is 5 times or more of the total concentration of Li, Na, and K on other surface of each of the plurality of fired films.

Ferroelectric film and method of producing same

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9&#x3c;x&#x3c;1.3, 0&#x2266;y&#x3c;0.1, and 0&#x2266;z&#x3c;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

A LaNiOthin film having extremely few voids is uniformly formed. Provided is a LaNiOthin film-forming composition for forming a LaNiOthin film. It includes: a LaNiOprecursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes &#x3b2;-diketones, &#x3b2;-ketones, &#x3b2;-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150&#xb0; C. to 300&#xb0; C. and a surface tension of 20 to 50 dyn/cm. The LaNiOprecursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiOprecursors. The second organic solvent content is 5 to 20 mass % with respect to the composition.

LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9 &#x3c;&#xd7;&#x3c;1.3, 0&#x2266;y&#x3c;0.1, and 0&#x2266;z&#x3c;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9&#x3c;x&#x3c;1.3, 0&#x2266;y&#x2266;0.1, and 0&#x2266;z&#x2266;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

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Naka, Japan

Jun Fujii