Tsinghua University

Telefonaktiebolaget Lm Ericsson (publ)

China Petroleum & Chemical Corporation

X-fab Semiconductor Foundries Ag

Polymer(suzhou) Sensing Technology Co. Ltd.

Beijing Polymer Sensing Technology Co., Ltd.

The Procter Gamble Company

Research Institute of Petroleum Processing, Sinopec

Jun Fu

Jie Cui

Yue Zhao

Zhi-hong Liu

Wei Zhang

Weidong Wang

Gao-qing Li

Zheng-li Wu

Wei Wang

Haitao Liu

Jiushun Zhang

Fancheng Wang

Chaogang Xie

Li Tang

Xiaoxin Liu

Yu-dong Wang

Wei Chang

Lianbo Yu

Anguo Mao

Xueyuan Zhang

Jingchuan Yu

Shrish Yashwant Rane

Kun Sun

Ping Xu

Honglan Wang

Wen-pu Cui

Dawei Guo

An integrated low-pass and band-pass filter unit comprises an inner cavity formed by a shell of conductive materials; one or more low-pass resonators and two or more band-pass resonators comprised in the inner cavity. The low-pass and band-pass resonators are integrally formed by electroplated sheet metal material, and a part of each of the low-pass and band-pass resonators is coated with dielectric material. The two or more band-pass resonators are arranged at two sides of the inner cavity such that at least two resonators are aligned to face each other. The integrated low-pass and band-pass filter unit further comprises a first separator of electroplated sheet metal arranged in the inner cavity between the low-pass resonators and band-pass resonators and a second separator of electroplated sheet metal arranged in the inner cavity between the band-pass resonators at the two sides of the inner cavity.

Integrated low-pass and band-pass filter unit formed by sheet metal coated with dielectric material

A resonator apparatus, a filter apparatus as well as a radio frequency and microwave device are disclosed. According to an embodiment, the resonator apparatus comprises an electrically conductive case and a dual-mode dielectric resonator provided in the electrically conductive case. The dual-mode dielectric resonator comprises a first dielectric block having a shape of a columnar body whose cross section is a cruciform. A mode coupling structure for coupling two resonant modes of the dual-mode dielectric resonator is provided in the columnar body. A bottom face of the columnar body is supported by an inner face of the electrically conductive case or by a supporting member provided on the inner face of the electrically conductive case. In at least one extending direction of a first extending direction and a second extending direction of the cruciform which are perpendicular to each other, lateral end faces of the columnar body are spaced apart from inner faces of the electrically conductive case.

Resonator apparatus, filter apparatus as well as radio frequency and microwave device

The present invention provides a general four-port on-wafer high frequency de-embedding method. The method comprises: for each on-wafer de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the on-wafer de-embedding dummy; obtaining the intrinsic Y-parameter admittance matrix of said N on-wafer de-embedding dummies by calculation or simulation by using said models; and solving the equation set which the corresponding measurement and calculation or simulation data of said on-wafer de-embedding dummies satisfy for the elements of the related admittance matrices of the parasitic four-port network to be stripped in de-embedding and model parameters of models on which said calculation or simulation is based.

General four-port on-wafer high frequency de-embedding method

The present invention discloses a method of removing sulfur oxides and/or nitrogen oxides in a regeneration flue gas emitted from a regenerator of a catalytic cracking plant and recovering the elemental sulfur and an apparatus therefor.

Method of removing sulfur oxides and nitrogen oxides in the flue gas

The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance Rof the prior art products. The metal silicide self-aligned SiGe heterojunction bipolar transistor of the present invention mainly comprises an Si collector region, a local dielectric region, a base region, a base-region low-resistance metal silicide layer, a polysilicon emitter region, an emitter-base spacer dielectric region composed of a liner silicon oxide layer and a silicon nitride inner sidewall, a monocrystalline emitter region, a contact hole dielectric layer, an emitter metal electrode and a base metal electrode. The base-region low-resistance metal silicide layer extends all the way to the outside of the emitter-base spacer dielectric region. The present invention discloses a method of forming a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is used to form the aforesaid bipolar transistor. The metal silicide self-aligned SiGe heterojunction bipolar transistor and the method of forming the same of the present invention can reduce the base resistance R, and feature a simple process and a low cost.

Metal silicide self-aligned SiGe heterojunction bipolar transistor and method of forming the same

A photoelectric-type continuous liquid level measurement method is applied to a photoelectric-type continuous liquid level measurement device which comprises at least one sensor module formed by cascading a plurality of sensors, and comprises: driving the sensors one by one from bottom to top to take a liquid level measurement; after detecting the light intensity of a detection light returned from the position where the sensors are located, the sensors which are currently in a driving state conducting analog-to-digital conversion on a voltage value corresponding to the detected light intensity to obtain current analog-to-digital conversion data; according to the correlation between a preset liquid level and the analog-to-digital conversion data, determining the liquid level of the position where the sensors are located; and summarizing to a transmitter module the liquid level measured by each of the sensors to obtain the total liquid level of a currently measured.

Photoelectric-type continuous liquid level measurement method and device

A humidity measurement device comprises a capacitance measurement unit () and a microcontroller (). The capacitance measurement unit () is used to output a frequency signal of a humidity-sensitive capacitor (C) by the humidity-sensitive capacitor (C) and a frequency signal of a reference capacitor (C) by the reference capacitor (C) respectively. The microcontroller () is used to obtain a frequency value of the humidity-sensitive capacitor (C) and a frequency value of the reference capacitor (C) based on the frequency signal of the humidity-sensitive capacitor (C) and the frequency signal of the reference capacitor (C), and obtain a current ambient humidity value by using a linear function relationship of a frequency difference between the humidity-sensitive capacitor (C) and the reference capacitor (C) and a humidity value. A humidity measurement method includes using the said humidity measurement device to measure a current ambient humidity value.

Humidity measurement device and method

The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter. The external base region is grown through an in-situ doping selective epitaxy process and is embedded in the collector region. A portion of the external base region is located beneath the sidewalls. The present invention discloses a method of forming a bipolar transistor with an embedded epitaxial external base region. The bipolar transistor with an embedded epitaxial external base region of the present invention avoids the TED effect and reduces the resistance of the external base region of the device so that the performance of the device is improved. The method of forming a bipolar transistor with an embedded epitaxial external base region of the present invention achieves the aforesaid bipolar transistor with an embedded epitaxial external base region, and features concise steps, a low cost and simple operations, and the structure obtained has good performance.

Bipolar transistor with embedded epitaxial external base region and method of forming the same

A method in which an oxide layer is formed on material defining and surrounding an emitter window. The technique comprises depositing a non-conformal oxide layer on the surrounding material and in the emitter window, whereby the thickness of at least a portion of the oxide layer in the emitter window is smaller than the thickness of the oxide layer on the surrounding material outside the emitter window; and removing at least a portion of the oxide layer in the emitter window so as to reveal at least a portion of the bottom of the emitter window whilst permitting at least a portion of the oxide layer to remain on the surrounding material. The technique can be used in the manufacture of a self-aligned epitaxial base BJT (bipolar junction transistor) or SiGe HBT (hetero junction bipolar transistor).

Transistor manufacture

Growing community of inventors

Beijing, China

Jun Fu