Korea Electronics Technology Institute

Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Jun Chul Kim

Dong Su Kim

Jong Min Yook

Christine Rhea Oh

Wonseok Oh

Chongyoon Chung

Wansup Kim

Chul Kyu Kim

Duck Hwan Kim

Jea Shik Shin

In Sang Song

Yun Kwon Park

Sang Uk Son

Se Hoon Park

Young Il Kim

Sung Hyun Lim

Hyung Rak Kim

Yu Sin Yang

Jeong Woo Woo

Min Kook Kim

Je In Yu

Myung Suk Um

Ye Ny Yim

The present invention provides a method for manufacturing a high frequency capacitor, including preparing a substrate for formation of the capacitor, forming a dielectric layer at an upper surface of the substrate, forming an upper electrode at an upper surface of the dielectric layer, and removing a portion of a lower surface of the substrate, to expose a lower surface of the dielectric layer, and forming a lower electrode at the lower surface of the dielectric layer. The high frequency capacitor includes a dielectric layer having a uniform surface, a thick upper electrode, and a thick lower electrode and, as such, exhibits high quality factor (Q) even at a high frequency.

High frequency capacitor and manufacturing method thereof

A quasi-coaxial transmission line, a semiconductor package including the same and a method of manufacturing the same are disclosed. The quasi-coaxial transmission line includes a core, which is formed through an upper surface and a lower surface of a base substrate so as to transmit an electrical signal, and a shield, which is spaced apart from the core and which coaxially surrounds a side surface of the core, at least a portion of the shield being removed so as to form an open portion. The quasi-coaxial transmission line is capable of preventing distortion of an electrical signal at a portion thereof that is connected to an external circuit board and to reduce an area of a semiconductor package including the quasi-coaxial transmission line.

Quasi-coaxial transmission line, semiconductor package including the same, and method of manufacturing the same

A semiconductor package includes a semiconductor chip including an electrode pad formed on the top surface thereof, a passive device embedded in the semiconductor package, the passive device having no functional electrode on the top surface thereof, a cover layer covering the semiconductor chip and the passive device, and at least one electrode pattern formed on the cover layer to transmit electrical signals. The cover layer includes at least one first opening formed to expose a region in which the functional electrode is to be formed. The electrode pattern includes a functional electrode portion formed in a region in which the functional electrode of the passive device is to be formed through the first opening. In the process of forming the electrode pattern, a functional electrode of the passive device is formed together therewith, thereby eliminating a separate step of manufacturing a functional electrode and thus reducing manufacturing costs.

Semiconductor package including passive device embedded therein and method of manufacturing the same

An embodiment of the present invention provides a capacitor having a through hole structure and a manufacturing method therefor. The capacitor having the through hole structure includes: a baseboard having a through hole penetrating from an upper surface of the baseboard to a lower surface thereof; a first conductive layer formed on an internal surface of the through hole, and the upper surface of the baseboard, the lower surface thereof, or both the upper and lower surfaces thereof; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer.

Capacitor having through hole structure and manufacturing method therefor

A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.

Method of inspecting semiconductor device

In one embodiment of the present invention, there is provided an MIS capacitor, including: a lower electrode formed with a semiconductor substrate having electrical conductivity and through which an electrical signal passes at a lower surface thereof; an insulating layer formed on the lower electrode; an upper electrode formed on the insulating layer and through which the electrical signal passes at an upper surface thereof; and a first conductive layer formed on side surfaces of the lower electrode so that the electrical signal passing the lower surface and an upper surface of the lower electrode passes along the side surfaces of the lower electrode, wherein the first conductive layer has electro conductivity higher than the electro conductivity of the lower electrode.

MIS capacitor

Disclosed is a semiconductor package including: a base substrate provided with at least one cavity and made of a metallic material; at least one semiconductor chip mounted in the cavity; and a heat dissipating member arranged in a gap between an inner surface of the cavity and the semiconductor chip.

Semiconductor package and method for manufacturing the same

A method for forming a wiring for a semiconductor device according to an aspect of the present invention includes: forming a predetermined pattern on a first surface of a silicon substrate by selectively etching the first surface; coating, with a metal layer, a selected area of the first surface, including an area whereat the predetermined pattern is formed; forming organic material in the first surface to fill an etched portion and cover the coated metal layer; forming a plurality of via holes in the organic material and connecting the metal wiring to the coated metal layer through the via holes; and grinding a second surface corresponding to the first surface to remove a part of the metal layer formed in the etched portion.

Wiring for semiconductor device and method of forming same

An apparatus for measuring a distance can include a camera module and a film having a reference pattern. The camera module can include an infrared LED transmission unit to transmit an infrared LED light toward the film and a module unit calculating a distance from an object by using a size of a pattern projected onto the object which is obtained from an image of a camera unit. The film can include an infrared film and a plurality of holes formed in the infrared film.

Measuring distance from object by using size of pattern projected onto object

Disclosed are a display apparatus and a power saving method thereof. The power saving method of a display apparatus includes acquiring an image by photographing surroundings of the display apparatus, detecting a human body region contained in the image by analyzing the acquired image, and entering a power saving mode by determining there is no user viewing the display apparatus if the human body region is not detected in the image.

Display apparatus and power saving method thereof

Mobile phone

Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.

Low pass filter using bulk acoustic wave resonator (BAWR)

Disclosed are a radio frequency (RF) front end module and a multi-band communication module using the RF front end module. The RF front end module may use a plurality of bandpass filters and at least one diplexer being connected to at least one of front ends or rear ends of two bandpass filters of the plurality of bandpass filters.

Growing community of inventors

Seongnam-si, South Korea

Jun Chul Kim