Carnegie Mellon University

Sun Yat-senuniversity

Electric Power Research Institute, China Southern Power Grid

Guangzhou Bureau, Csg Ehv Power Transmission Company

Guangzhou Sunmile Dynamic Technologies Corp., Ltd

China Southern Power Grid

Jun Chen

Cheng Chen

Yan Li

Hong Rao

Shukai Xu

Kai Wang

Man Zhang

Fuhai Duan

Changyue Zou

Xiaobin Zhao

Weiwei Li

Yu Wang

Junjie Feng

Shuangfei Yang

Jianying Wang

Weijia Zhang

Xiaowei Huang

Zhenjin Cen

Cong Wu

Chi Cai

Qingming Xin

Yikang Chen

Xiaojun Li

Qiang Guo

Hai Ou

Guang Ji

Hangwei Chen

Fang He

Wulue Zheng

Yong Cai

Hai Lu

Fang Liu

Yang Zhu

Qingshuai Wu

Zheng Chen

Gang Zhao

A bread maker includes a base having an accommodating cavity and a heating plate, a heating element, and a collapsible container. The collapsible container includes a body assembly detachably supported on the heating plate. The body assembly includes a plurality of boundary panels, wherein each of the boundary panels foldably connected to two of the adjacent boundary panels so to move between an unfolded position and a folded position, wherein in the unfolded position, the boundary panels are extended to form a substantially rectangular structure on the heating plate, wherein in the folded position, each of the boundary panels is folded with respect to adjacent boundary panels so as to be collapsible into a stacked structure, so that the stacked structure can be accommodated in the accommodating cavity.

Bread maker with collapsible container

Method for determining parameter of a passive impedance adapter applicable to VSC-HVDC, including: S. obtaining VSC-HVDC impedance and VSC-HVDC impedance curve X(f) based on VSC-HVDC impedance; S. estimating upper limit value of the main capacitor in the passive impedance adapter; S. calculating adapter parameter curve X(f); S. determining value of the main capacitor and varying value of the main resistor until min[X(f)−X(f)] is maximized; determining whether min[X(f)−X(f)]>k holds; S. If min[X(f)−X(f)]>k does not hold, increasing the value of the main capacitor and performing steps S-Suntil min[X(f)−X(f)]>k holds when the value of the main capacitor is within the range of the value of the main capacitor, storing the parameters in an available parameter set; S. reducing the value of the main capacitor, and storing the parameters when min[X(f)−X(f)]>k holds in the available parameter set; S. selecting the available parameters from the available parameter set.

Method and device for determining parameter of passive impedance adapter applicable to VSC-HVDC

Puzzle board

A cable-direction-adaptive ROV winch applied to non-DP-equipped motherships, includes a non-DP-equipped mothership, an A-shaped support and a winch cable-drawing roller provided on the non-DP-equipped mothership, and an underwater vehicle. A pulley is rotatably connected to the A-shaped support, the underwater vehicle is connected to an umbilical cable, the umbilical cable passes around the pulley to be connected to the winch cable-drawing roller, and a locating unit for guiding the umbilical cable is provided on the non-DP-equipped mothership. The A-shaped support is provided with a rod. The pulley includes a sliding section and a rotating section, and the sliding section is annular and slides on the rod along a direction of the rod. The rod has a groove, and a bulge portion is formed on the sliding section. The rotating section is rotatably connected to an outer circle of the sliding section via a shaft bearing.

Cable-direction-adaptive ROV winch applied to non-dynamic-positioning-equipped motherships

The present invention discloses a thin-film transistor structure with a three-dimensional fin-shape channel and a preparation method thereof. The preparation method includes following steps: (a) depositing and etching a bottom gate electrode on a substrate; (b) depositing a bottom dielectric layer at an upper part of a structure obtained from the step (a), and sequentially depositing a semiconductor film on the bottom dielectric layer; (c) etching the semiconductor film to obtain a fin-type channel; (d) respectively depositing an ohmic contact layer, a source electrode and a drain electrode on the semiconductor film located at both sides of the fin-shape channel, and etching; (e) depositing a top dielectric layer and a top gate electrode at an upper part of a structure obtained from the step (d); and (f) etching the top gate electrode, an completing a preparation of a thin-film transistor with a dual-gate three-dimensional fin-shape channel.

Thin-film transistor structure with three-dimensional fin-shape channel and preparation method thereof

Growing community of inventors

Guangzhou, China

Jun Chen