Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Alpad Corporation

Samsung Electronics Co., Ltd.

Jumpei Tajima

Shinya Nunoue

Toshiki Hikosaka

Hiroshi Ono

Masahiko Kuraguchi

Naoharu Sugiyama

Hajime Nago

Shigeya Kimura

Kenjiro Uesugi

Kotaro Zaima

Hisashi Yoshida

Hiroshi Katsuno

Shinji Yamada

Toshihide Ito

Yasuo Ohba

Kei Kaneko

Mitsuhiro Kushibe

Taisuke Sato

Yoshiyuki Harada

Toshiyuki Oka

Daimotsu Kato

Yosuke Kajiwara

Kazuyuki Miyabe

Koji Kaga

Tomio Ono

Nobuyoshi Saito

Shintaro Nakano

Jongil Hwang

Kentaro Miura

Akira Mukai

Aya Shindome

Shunsuke Asaba

Miki Yumoto

Yuya Maeda

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x≤1), a second nitride region including AlGaN (0≤x<1), and an intermediate region being between the first nitride region and the second nitride region. In a first direction from the first nitride region to the second nitride region, an oxygen concentration in the nitride member has a peak value at a first position included in the intermediate region. The peak value is 4.9 times or more a first oxygen concentration in the first nitride region. A second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region.

Nitride semiconductor and semiconductor device

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN, a second nitride region including AlGaN, and a third nitride region including AlGaN. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0×10and not more than 1.4×10.

According to one embodiment, a wafer includes a silicon substrate including a first surface, and a nitride semiconductor layer provided on the first surface. The silicon substrate includes a plurality of first regions that can be distinguished from each other in an X-ray image of the wafer. The first regions are separated from an outer edge region of the silicon substrate. One of the first regions includes a plurality of first linear bodies along a first line direction. An other one of the first regions includes a plurality of second linear bodies along a second line direction. The second line direction crosses the first line direction.

Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the wafer

According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the base body and the second nitride region. The first nitride region includes a first portion and a second portion. The second portion is between the first portion and the second nitride region. An oxygen concentration in the first portion is higher than an oxygen concentration in the second portion. The oxygen concentration in the second portion is not more than 1×10/cm. A first thickness of the first portion in a first direction from the first to second nitride regions is thinner than a second thickness of the second portion in the first direction.

Nitride semiconductor including multi-portion nitride region

According to one embodiment, a nitride semiconductor includes a base body, a nitride member, and an intermediate region provided between the base body and the nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the intermediate region and the second nitride region. The intermediate region includes nitrogen and carbon. A concentration of carbon in the intermediate region is not less than 1.5×10/cmand not more than 6×10/cm.

Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first electrode includes a first electrode portion. The second semiconductor layer includes first and second semiconductor portions. The third semiconductor layer includes first and second semiconductor regions. The second semiconductor region is electrically connected to the first semiconductor region and the first electrode portion. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

Semiconductor device

According to one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer including magnesium and AlGaN. The first semiconductor layer includes first, second, and third regions. The first region is between the substrate and the third region. The second region is between the first and third regions. A first concentration of magnesium in the first region is greater than a third concentration of magnesium in the third region. A second concentration of magnesium in the second region decreases along a first orientation. The first orientation is from the substrate toward the first semiconductor layer. A second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation is greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.

Semiconductor device and method for manufacturing the same

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), a second nitride region including AlGaN (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes AlGaN and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes AlGaN. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

A semiconductor device is provided, including: a substrate; and a first semiconductor layer including magnesium and Al/GaN (0&#x2264;x1&#x3c;1), the first semiconductor layer including a first region, a second region, and a third region, the first region being between the substrate and the third region, the second region being between the first region and the third region, a first concentration of magnesium in the first region being greater than a third concentration of magnesium in the third region, a second concentration of magnesium in the second region decreasing along a first orientation, the first orientation being from the substrate toward the first semiconductor layer, and the first region not including carbon, or a concentration of carbon in the first region being less than the concentration of carbon in the third region.

A method for manufacturing a semiconductor device is provided, the method including forming an intermediate region including AlGaN (0&#x3c;x3&#x2264;1 and x2&#x3c;x3) on a first semiconductor layer including AlGaN (0&#x2264;x1&#x3c;1); and forming a second semiconductor layer including AlInN (0&#x3c;x2&#x3c;1 and x1&#x3c;x2) on the intermediate region, a first gas being used to form the intermediate region in the forming of the intermediate region, the first gas including a gas including Al, a gas including ammonia, and a gas including hydrogen, and a second gas being used to form the second semiconductor layer in the forming of the second semiconductor layer, the second gas including a gas including Al, a gas including In, a gas including ammonia, and a gas including nitrogen.

Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device

According to one embodiment, a semiconductor device includes a first crystal region, a second crystal region, a third crystal region, and a fourth crystal region. The first crystal region includes magnesium and AlGaN (0&#x2264;x1&#x3c;1). The second crystal region includes AlGaN (0&#x3c;x2&#x2264;1). The third crystal region is provided between the first crystal region and the second crystal region. The third crystal region includes oxygen and AlGaN (0&#x2264;x3&#x2264;1 and x3&#x3c;x2). The fourth crystal region is provided between the third crystal region and the second crystal region. The fourth crystal region includes AlGaN (0&#x2264;x4&#x3c;1 and x4&#x3c;x2).

Growing community of inventors

Mitaka, Japan

Jumpei Tajima