Seagate Technology Incorporated

Jumna P Ramdular

Sunita B Gangopadhyay

Liu Yang

Zheng Gao

Michael Allen Seigler

Dimitar Velikov Dimitrov

Michael C Kautzky

Nurul Amin

Sining Mao

Taras Grigorievich Pokhil

Ladislav Rudolf Pust

Edward Stephens Murdock

Gordon Merle Jones

Allan E Schultz

Peter K George

Anthony M Mack

Peter I Bonyhard

Mallika Kamarajugadda

Youping Mei

Arthur Calderon

I-Fei Tsu

Leroy L Longworth

Mohamed Salah H Khlif

Sara L Gordon

Paul E Gallup

Ananth Naman

Robert W Lamberton

Juan J Fernandez-De Castro

Sisavath M Bounnakhom

Timothy Radke

Jin Li

Helen Chung

Ralph D Knox

John E Dzarnoski

A head for a magnetic drive that includes a substrate with a thermal expansion rate CTE. A transducer in the head has a bond to the substrate and has a transducer thermal expansion rate CTEthat is greater than CTEA restraint layer in the substrate has a bond to one side of the transducer and has a first restraint layer thermal expansion rate CTEthat is lower than CTEThe restraint layer restrains protrusion of the transducer beyond the substrate at higher operating temperatures.

Thermal compensation for head protrusion in a magnetic drive

A method is used for forming sliders for use in a disc drive actuation system. The method comprises providing a wafer formed of a substrate having a base coat and an overcoat. Wafer-level notch lanes having a first width extend across the wafer in a first direction. The overcoat is removed from the wafer-level notch lanes. The wafer is sliced along a portion of the wafer-level lanes through the base coat to form a channel. The wafer is mechanically sliced through the substrate along slice lanes that extend across the wafer in the first direction to differentiate the wafer into bars. The bars are cut in a second direction substantially perpendicular to the first direction to form the sliders.

Laser-assisted slicing of notched wafer

A read/write head with a bottom shield on a slider substrate and a shared shield spaced apart from the bottom shield. A write head is deposited on the shared shield. A read sensor is spaced apart by reader magnetic gaps from the bottom shield and the shared shield. Electrically insulating layers in the reader magnetic gaps form a thermal resistance between the read sensor and the shields. A thermally conducting nonmagnetic layer in a reader magnetic gap reduces the thermal resistance without a corresponding reduction in the reader magnetic gaps.

Non-magnetic metallic layer in a reader gap of a disc drive

A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.

Spin valve sensor with exchange tabs

A data transfer head includes a data transfer element for transferring date between the data transfer head and a data storage medium and a dielectric gap electrically shielding the data transfer element. The dielectric gap includes a plurality of layered dielectric film wherein adjacent dielectric films are formed of different dielectric materials. A method of forming a magnetoresistive sensor includes forming a thin film data transfer element and forming a dielectric gap to electrically shield the data transfer element. Forming the dielectric gap includes depositing a number of adjacent dielectric films on an underlayer and depositing a second dielectric film on the first dielectric film. The second dielectric film being different from the first dielectric film.

Data sensor including layered dielectric gap

A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.

Dielectric gap material for magnetoresistive heads with conformal step coverage

MR sensor having thick active region between two thinner inactive MR

Growing community of inventors

Brooklyn Park, MN, United States of America

Jumna P Ramdular