Samsung Electronics Co., Ltd.

Jum-yong Park

Jin-ho Chun

Nae-in Lee

Ho-jin Lee

Seong-min Son

Jeong-gi Jin

Byung-Lyul Park

Kyu-ha Lee

Jin-Ho An

Pil-Kyu Kang

Ji-soon Park

Tae-Yeong Kim

Seok-Ho Kim

Joo-Hee Jang

Yi-Koan Hong

Hyung-Jun Jeon

Hyo-Ju Kim

A semiconductor chip includes a semiconductor substrate including a bump region and a non-bump region, a bump on the bump region, and a passivation layer on the bump region and the non-bump region of the semiconductor substrate. No bump is on the non-bump region. A thickness of the passivation layer in the bump region is thicker than a thickness of the passivation layer in the non-bump region. The passivation layer includes a step between the bump region and the non-bump region.

Semiconductor chip

A first insulating layer is formed on a substrate. An opening is formed in the first insulating layer. A barrier layer is formed on the first insulating layer and conforming to sidewalls of the first insulating layer in the opening, and a conductive layer is formed on the barrier layer. Chemical mechanical polishing is performed to expose the first insulating layer and leave a barrier layer pattern in the opening and a conductive layer pattern on the barrier layer pattern in the opening, wherein a portion of the conductive layer pattern protrudes above an upper surface of the insulating layer and an upper surface of the barrier layer pattern. A second insulating layer is formed on the first insulating layer, the barrier layer pattern and the conductive layer pattern and planarized to expose the conductive layer pattern. A second substrate may be bonded to the exposed conductive layer pattern.

Method of fabricating multi-substrate semiconductor devices

A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Semiconductor devices and methods of manufacturing the same, and semiconductor packages including the semiconductor devices

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Yongin-si, South Korea

Jum-yong Park