Nextinput, Inc.

Qorvo Us, Inc.

Decawave Limited

Julius Minglin Tsai

Dan Benjamin

Ryan Matthew Diestelhorst

Ali Foughi

Albert M Bergemont

Mehrnaz Rouhi Youssefi

Christopher Edwards

Michael J Dueweke

Michael Dueweke

Bryan Low

Mong Yang

Daniel Krstyen Benjamin

Yenhao Chen

Tom A Kwa

Described herein are input structures that include an input surface and one or more sensor modules attached to the input surface. Each sensor module includes one or more sensors operably attached to a substrate. The one or more sensors are operable to detect strain on the substrate. One or more portions of the substrate are removed to produce a stress concentration region in proximity to at least one sensor. The stress concentration region concentrates strain in proximity to the at least one sensor.

Input structures that include slots that create a stress concentration region in a substrate for strain detection by a sensor

Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.

Slotted MEMS force sensor

Systems and methods for temperature coefficient of offset compensation for a resistance bridge are disclosed. In one aspect, one or more current sources are added in parallel to resistance elements within a resistance bridge. The current source(s) may be selectively switched on and adjusted by a control circuit based on readings from a temperature sensor. In this fashion, the temperature induced variations in the resistance may be canceled or corrected allowing for better performance of the resistance bridge.

Temperature coefficient of offset compensation for resistance bridge

An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

Sealed force sensor with etch stop layer

MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.

Temperature coefficient of offset compensation for force sensor and strain gauge

An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

Described herein is a sensor in chip scale package form factor. For example, a non-vacuum packaged sensor chip described herein includes a substrate, and a sensing element arranged on the substrate. The sensing element is configured to change resistance with temperature. Additionally, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb middle infrared ('MIR') radiation.

Combined near and mid infrared sensor in a chip scale package

In one embodiment, a ruggedized wafer level microelectromechanical ('MEMS') force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Integrated digital force sensors and related methods of manufacture

Described herein is a ruggedized microelectromechanical ('MEMS') force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.

Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture

Integrated systems for force or strain sensing and haptic feedback are described herein. An example force-haptic system can include a sensor chip configured to receive an applied force, where the sensor chip includes at least one sensing element and an integrated circuit. The force-haptic system can also include a haptic actuator configured to convert an electrical excitation signal into mechanical vibration. Further, the force-haptic system can include a circuit board, where the sensor chip and the haptic actuator are electrically and mechanically coupled to the circuit board. The integrated circuit can be configured to process an electrical signal received from the at least one sensing element and to output the electrical excitation signal.

Integrated systems with force or strain sensing and haptic feedback

Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.

Force attenuator for force sensor

Described herein is a ruggedized microelectromechanical ('MEMS') force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor ('CMOS') circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Growing community of inventors

San Jose, CA, United States of America

Julius Minglin Tsai