Steag Rtp Systems Gmbh

Other

Julio L Guardado

Paul Janis Timans

A method and system for calibrating radiation sensing devices, such as pyrometers, in thermal processing chambers are disclosed. The system includes a reflective device positioned opposite the radiation sensing devices and a calibrating light source which emits light energy onto the reflective device. The system is designed so that each radiation sensing device is exposed to the same intensity of light being reflected off the reflective device, which has a preset value. The radiation sensing devices are then used to measure the amount of light energy being reflected which is then compared to the preset value for making any necessary adjustments.

System and process for calibrating pyrometers in thermal processing chambers

The present invention is directed to an apparatus and process for heat treating wafers, such as semiconductor wafers, in thermal processing chambers. In particular, the apparatus of the present invention includes an electrical heating element positioned along the edges of a wafer contained in the thermal processing chamber. The electrical heating element which can be made, for instance, from silicon, silicon carbide or graphite, radiates heat towards the edges of the wafer during processing. The heating element is designed to compensate for heat losses that occur at the wafer's edge.

Heating element for heating the edges of wafers in thermal processing chambers

An apparatus and method for determining the temperature of a semiconductor wafer in a thermal processing chamber in the presence of a radiation absorbing gas, such as a vapor, is disclosed. The apparatus includes a temperature sensing device which senses the amount of electromagnetic radiation being emitted by a wafer being heated and a gas sensing device which senses the amount of a gas present within the chamber. The system further includes a controller which is placed in communication with the temperature sensing device and the gas sensing device. The controller is configured to determine a correction factor based upon the amount of gas contained within the chamber. The correction factor in combination with information received from the temperature sensing device are then used to determine the temperature of the wafer.

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Milpitas, CA, United States of America

Julio L Guardado