Centre National De La Recherche Scientifique

Université Grenoble Alpes

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Joseph Fourier

Institut Polytechnique De Grenoble

Julien Pernot

Gauthier Chicot

Florin Udrea

Bruno Daudin

Nicolas Rouger

Jean-Louis Robert

Sylvie Contreras

Etienne Gheeraert

Toan Thanh Pham

Aurélien Marechal

Jean Camassel

Pierre Muret

Gwenole Jacopin

David Eon

A light-emitting diode is provided, including: a first layer of n-doped AlGaInN, with X1>0 and X1+Y1≤1; a second layer of p-doped AlGaInN, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Light-emitting diode comprising a hybrid structure formed of layers and nanowire

The invention relates to a deep depletion MIS transistor (), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate () arranged on the channel region and separated from the channel region by a dielectric layer ().

Diamond MIS transistor

The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.

Method for producing a MOS stack on a diamond substrate

A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/&deg; C. and with high Hall effect coefficient for temperatures greater than 200&deg; C. formed in a multilayer structure comprising a thin active layer deposited on a substrate, wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein the thin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor in the exhaustion regime.

Hall effect sensor

Growing community of inventors

Saint Martin d'Heres, France

Julien Pernot