Thomson-csf

Thales and Ecole Polytechnique

Thales

Ecole Polytechnique

Julien Nagle

Claude Weisbuch

Michel Papuchon

Jean-Paul Pocholle

Didier Pribat

Pierre Le Barny

Dominique Delacourt

Emmanuel Rosencher

Pierre Legagneux

Borge Vinter

Nakita Vodjdani

Paolo Bondavalli

In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J, Jwith the channel. At least transistors FET, FETof the array are differentiated by a different conducting material (m, m) of the source electrode S and/or drain electrode D.

Array of differentiated FETS having a nanotube or nanowire channel and corresponding electronic device, for the detection of analytes

A laser made of a stack of laser diodes. The stack is inserted between two mirrors to create a laser cavity. The stack of diodes is produced by epitaxial growth of a set of semiconductor layers. The ohmic contact between two adjacent laser diodes is provided by an Esaki diode junction. The optical field of the mode created in the laser cavity is periodically cancelled at the Esaki diode junctions so as to create structures with small dimensions.

Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors

A semi-conducting structure delimits two quantal wells (CP1, CP2) connected across a barrier layer (CB). The application of an electric field to the structure makes possible the transfer of electrons from one of the wells to the other. The electron-hole pairs are created by a wave-pump, or by the doping of one of the wells. This makes possible, in particular, a dual control by means of the wave-pump and the electric field, thus creating an 'AND'-function modulator.

Electromagnetic wave modulator equipped with coupled quantal wells, and

The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.

Quantum well semiconductor laser

Growing community of inventors

Palaiseau, France

Julien Nagle