L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Samsung Electronics Co., Ltd.

Julien Lieffrig

Christian Dussarrat

Clément Lansalot-Matras

Hana Ishii

Antoine Colas

Jong Min Kim

Clement Lansalot-Matras

Jean-Marc Girard

Jae-Soon Lim

Youn-Joung Cho

Julien Gatineau

Joo-ho Lee

Wontae Noh

Gyu-Hee Park

Jooho Lee

Changhee Ko

Clement Lansalot

Won-tae Noh

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of:M(=O)(OR)&#x2003;&#x2003;Formula I,M(=O)(NR)&#x2003;&#x2003;Formula II,M(=O)(NR)&#x2003;&#x2003;Formula III,M(=NR)(OR)&#x2003;&#x2003;Formula IV, andM(=O)(OR)&#x2003;&#x2003;Formula V,wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of:M(&#x2550;O)(OR)&#x2003;&#x2003;Formula I,M(&#x2550;O)(NR)&#x2003;&#x2003;Formula II,M(&#x2550;O)(NR)&#x2003;&#x2003;Formula III,M(&#x2550;NR)(OR)&#x2003;&#x2003;Formula IV, andM(&#x2550;O)(OR)&#x2003;&#x2003;Formula V,wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):Nb(RCp)(L)&#x2003;&#x2003;Formula (1)

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.

Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR)Formula I, M(=O)(NR)Formula II, and M(=NR)(OR)Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.

Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films

Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(RCp)(L), wherein each R is independently H, an alkyl group, or R'Si, with each R&#x2032; independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N-fmd) or amidinates (NR&#x2033;-amd).

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.

Growing community of inventors

Soucy, France

Julien Lieffrig