L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

American Air Liquide, Inc.

Julien Gatineau

Bo Peng

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula:(NRR)(NRR)Ga[(RRN)C(RR)(NR)]  (I)(Cy-N)Ga[(RRN)C(RR)(NR)]  (II)wherein, Rto Rare independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; Rto Rmay be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

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Jouy-en-Josas, France

Julien Gatineau