Soitec

Frec'n'sys

Julien Garcia

Thierry LaRoche

Emilie Courjon

Sylvain Ballandras

Florent Bernard

Alexandre Raveski

An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.

Two-port acoustic wave sensor device

An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.

Differential acoustic wave sensors

A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.

Acoustic wave sensor and interrogation of the same

An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.

Differential acoustic wave pressure sensor with improved signal-to-noise ratio

An electrical device adapted to operate at a high operating ambient temperature includes an electrical component mounted inside a casing, a transmission/reception antenna and at least one electrical and mechanical connection between the electrical component and the antenna. The electrical and mechanical connection comprises a metal pad positioned under the casing, the antenna being connected to the pad; an electrical connection tab having a first end connected to the electrical component; and fixing means adapted to secure the pad and a second end of the connection tab of the component. The device is applicable to, for example, temperature sensors of the surface guided elastic wave type.

Growing community of inventors

Chamblay, France

Julien Garcia