Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Danmarks Tekniske Universitet

Université Paris Diderot-paris 7

Cnrs

Julien Claudon

Jean-Michel Gerard

Giuseppe Leo

Alessio Andronico

Jean-Michel Gérard

Philippe Lalanne

Yoann Cure

Mathieu Munsch

Niels Gregersen

Vincent Berger

Guiseppe Leo

The invention relates to a light source comprising a photonic wire having a single-mode core and adapted to support an optical mode which is degenerate in polarization, comprising an emitter of a pair of photons which are intended to be entangled in polarization. The photonic wire comprises a cladding which is asymmetrical in rotation and extends along a principal transverse axis. Furthermore, the light source comprises a correction device adapted to induce by electrostatic effect a mechanical deformation of the photonic wire in a plane parallel to the substrate, along a deformation axis forming an angle of inclination of between 0° and 90°, these values being exclusive, with respect to the principal transverse axis, the mechanical deformation leading to mechanical strains experienced by the emitter, thus improving the degree of entanglement of the photon pair.

Light source adapted to emit pairs of polarization-entangled photons

A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter.

Single-photon source with high indiscernibility factor

The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror.

Optoelectronic arrangement provided with a semiconductor nanowire with a longitudinal section that is surrounded by a part of a mirror

The present invention relates to a single photon sourcecomprising a tapered nanowire, where the nanowireis made of a semiconductor material, a first electrodeand second electrode, where the electrodes are electrically coupled to a photon emitterembedded in the nanowireand wherein the photon emitteris capable of emitting a single photon when an activation voltage is applied between the electrodes. In advantageous embodiments of the invention, the nanowire is encircled by air or vacuum, such that advantage can be taken of the resultant large ratio between a refractive index of the nanowire and the encircling material, air. Another advantageous feature might be that the first and second electrodes are optically transparent, such that they can be used as part of a reflective element or anti-reflective element.

Electrically driven single photon source

A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Terahertz wave emission laser device with a perforated structure

A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.5 to 5 THz, the radiation being obtained through the difference in frequency of the two whispering gallery modes, the cylindrical geometry of the heterostructure ensuring phase tuning between the two optical whispering gallery modes belonging to the near-infrared spectrum and the terahertz mode at the difference in frequency; a second and a third semiconductor material layer, each having an optical index weaker than the index of the material of the first layer and located on both sides of the first layer; at least one metal layer located on one end of the hetero structure.

Growing community of inventors

Saint Martin le Vinoux, France

Julien Claudon