Hewlett-Packard Development Company, L.p.

Hewlett Packard Enterprise Development LP

Julien Borghetti

Matthew D Pickett

John Paul Strachan

Jianhua Yang

Gilberto Medeiros Ribeiro

Hans S Cho

Richard Stanley Williams

Shih-Yuan Wang

David A Fattal

Raymond G Beausoleil

Alexandre M Bratkovski

Sagi Varghese Mathai

Wei Guang Wu

Duncan R Stewart

Minxian Max Zhang

Nathaniel Quitoriano

Wei Yi

Dmitri Borisovich Strukov

Kai-Mei Camilla Fu

Marco Florentino

R Stanley Williams

A multilayer circuit () includes a base layer () which has a number of base vias (), a first overlying layer () formed on the base layer () and having a first routing section () and a second overlying layer () formed on the first overlying layer (). The second overlying layer () has a second routing section () and is formed using the same set of masks. The first routing section () and the second routing section () form a unique electrical pathway () between a base via () and an element in an overlying layer. A method for forming a multilayer circuit is also provided.

Multilayer circuit

Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.

Memory resistor adjustment using feedback control

A switchable junction () having an intrinsic diode () formed with a voltage dependent resistor () is disclosed. The switchable junction comprises a first electrode (), a second electrode (), and a memristive matrix () configured to form an electrical interface () with the first electrode (). The electrical interface has a programmable conductance. The voltage dependent resistor () is in electrical contact with the memristive matrix (). The voltage dependent resistor is configured to form a rectifying diode interface () with the second electrode ().

Switchable junction with an intrinsic diode formed with a voltage dependent resistor

A voltage-controlled switch comprises a first electrode, a second electrode, a switching junction situated between the first electrode and the second electrode, a conducting channel extending from adjacent to the origin through the switching junction and having a channel end situated near the second electrode, and a layer of dopants situated adjacent to an interface between the switching junction and the second electrode, wherein the dopants are capable of being activated to form switching centers.

Voltage-controlled switches

A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.

Two terminal memcapacitor device

A self-repairing memristor and methods of operating a memristor, and repairing a memristor, employ thermal annealing. The thermal annealing removes a short circuit in an oxide layer, of the memristor. Thermal annealing includes heating the memristor, to a predetermined annealing temperature for a predetermined annealing time period. The memristor, returns to an electrically open circuit condition after the short circuit is removed.

Self-repairing memristor and method

A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.

Memristive device

An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.

Electrically actuated device

A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.

Non-volatile sampler

A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.

Memristor having a triangular shaped electrode

A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event.

Fast time-tagged event detection using resistive switching devices

Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.

Oscillator circuitry having negative differential resistance

A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.

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Mountain View, CA, United States of America

Julien Borghetti