Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Julien Arcamone

Eric Colinet

Laurent Duraffourg

Philippe Andreucci

Guillaume Jourdan

Sebastien Hentz

Eric Ollier

Sébastien Hentz

Jeremie Ruellan

Mylene Savoye

Gregory Arndt

Jérémie Ruellan

Grégory Arndt

A thermal flow sensor comprising at least one first element () suspended with respect to a support, said first suspended element () being of an electrically conductive material, first means () for biasing said suspended element () and first means () for measuring the variation of the electric voltage at the terminals of the suspended element (), said first suspended element () being formed by a nanowire and said first biasing means () are formed by an alternating current source the intensity of which provides heating of the first suspended element () by Joule effect.

Thermal flow sensor, gas sensor comprising at least one such sensor and Pirani gauge comprising at least one such sensor

A MEMS/NEMS device having an adjustable frequency response comprises an array of electrostatically actuated resonators, an electrostatic actuation circuit, electrical detection means, and means adjusting the frequency response of the resonators. The device comprises resonators having a movable portion, electrically connected in series between a first biasing potential Vand a second biasing potential V, each resonator biased to a potential Vi between Vand V, depending on position in the series. The electrostatic actuation circuit comprises, for each resonator, an actuation electrode facing the movable portion, all electrodes being connected in parallel to a common control potential V, the actuation voltage of each resonator being equal to V&#x2212;Vi. The detection means comprises a detection output common to all resonators, the output being connected to an output potential V. The means for adjusting the frequency response varies the common control potential and/or at least one of the biasing potentials.

MEMS/NEMS device comprising a network of electrostatically actuated resonators and having an adjustable frequency response, notably for a band-pass filter

The invention relates to a thermal flow sensor comprising:

Thermal flow sensor with vibrating element and gas sensor comprising at least one such sensor

A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.

Method of forming a suspended structure and a transistor co-integrated on a same substrate

An electromechanical resonator produced on a substrate, and a method of producing thereof, including: a suspended structure produced at least partly from the substrate, configured to have a vibration imparted to it such that it resonates at least one natural resonance frequency of the suspended structure; an anchor structure to anchor the suspended structure, by at least one area of its periphery, to the remainder of the substrate, and dimensioned to resonate at the resonance frequency; a mechanism to excite the suspended structure, to cause it to vibrate at the resonance frequency; and a mechanism to detect the vibration frequency of the suspended structure.

Electromechanical resonator with resonant anchor

The resonator comprises an oscillating element and first and second excitation electrodes of the oscillating element. An AC signal generator is connected to the first and second excitation electrodes and delivers first and second signals of the same amplitudes and in antiphase on the first and second electrodes. A first DC voltage source is connected to a third electrode. A second DC voltage source is connected to a fourth electrode. An additional electrode is electrically connected to the oscillating element. A signal representative of oscillation of the oscillating element is provided by the additional electrode formed by an anchoring point of the oscillating element and biased by a third DC voltage.

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Grenoble, France

Julien Arcamone