Intel Corporation

Julie Rollins

Jack T Kavalieros

Tahir Ghani

Van H Le

Abhishek A Sharma

Bernhard Sell

Fatih Hamzaoglu

Travis W LaJoie

Pei-Hua Wang

Chieh-Jen Ku

Shem Ogadhoh

Allen B Gardiner

Juan G Alzate Vinasco

Umut Arslan

Nikhil Mehta

Gregory George

Akash Garg

Shu Zhou

Yu-Wen Huang

Vinaykumar Hadagali

Ting Chen

Veronica Newport

Lawrence Chapper

Daniel Broder

Brian Swalla

David White

Embodiments herein describe techniques for a semiconductor device including a substrate, a first inter-level dielectric (ILD) layer above the substrate, and a second ILD layer above the first ILD layer. A first capacitor and a second capacitor are formed within the first ILD layer and the second ILD layer. A first top plate of the first capacitor and a second top plate of the second capacitor are formed at a boundary between the first ILD layer and the second ILD layer. The first capacitor and the second capacitor are separated by a dielectric area in the first ILD layer. The dielectric area includes a first dielectric area that is coplanar with the first top plate or the second top plate, and a second dielectric area above the first dielectric area and to separate the first top plate and the second top plate. Other embodiments may be described and/or claimed.

Capacitor separations in dielectric layers

Embodiments herein describe techniques for a semiconductor device having an interconnect structure including an inter-level dielectric (ILD) layer between a first layer and a second layer of the interconnect structure. The interconnect structure further includes a separation layer within the ILD layer. The ILD layer includes a first area with a first height to extend from a first surface of the ILD layer to a second surface of the ILD layer. The ILD layer further includes a second area with a second height to extend from the first surface of the ILD layer to a surface of the separation layer, where the first height is larger than the second height. Other embodiments may be described and/or claimed.

Intermediate separation layers at the back-end-of-line

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Forest Grove, OR, United States of America

Julie Rollins