Intel Corporation

Micron Technology Incorporated

Julie M Walker

Doyle W Rivers

Rajesh Sundaram

Shekoufeh Qawami

Prashant S Damle

Kiran Pangal

Paul D Ruby

Anand S Ramalingam

Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Reduced uncorrectable memory errors

Several systems and methods of chip select are described. In one such method, a device maintains two identifiers, (ID_a and ID_m). When the device receives a command, it examines the values of ID_a and ID_m relative to a third reference identifier (ID_s). If either ID_a or ID_m is equivalent to ID_s, the device executes the command, otherwise, the device ignores the command. By using two different identification methods, a system has options in choosing to activate devices, being able to selectively switch between selecting multiple devices and single devices in a quick manner. In another such method, a device may have a persistent area that stores identification information such as an ID_a. Thus, system functionality may remain independent from any defect/marginality associated with the physical or logical components required for initial ID_a assignment of all devices in the system.

Devices, systems, and methods of reducing chip select

An integrated circuit, that may be a part of an electronic system, may include a first set of storage cells to store settings and a second set of storage cells to store alternate settings. At least one control cell may also be included in the integrated circuit. The at least one control cell may indicate whether to use the settings stored in the first set of storage cells, or the alternate settings stored in the second set of storage cells, to control one or more operating parameters of the integrated circuit. Methods for using the alternate setting are also described.

Devices, system, and methods for implementing alternate control settings

Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read and write operations to the non-volatile memory are carried out using the compensated voltage threshold.

Managing threshold voltage shift in nonvolatile memory

Alternate control settings

A shared-signaling multi-device memory system is capable of changing between addressing modes without the multi-device memory being required to undergo a power cycle. First and second registers of a memory device are set to both contain first address-identification information in response a first address-assignment command that is received a power cycle. The first register is set to contain second address-identification information in response a second address-assignment command that is received subsequently to the first address assignment command. Depending on the value of the second address-identification information, the memory device is configured in an individual-device-addressing mode or a parallel addressing mode without a power cycle. The first register can be reset to the first address-identification information contained in the second register in response to an address-restore command without a power cycle. A corresponding method is also disclosed.

Growing community of inventors

El Dorado Hills, CA, United States of America

Julie M Walker