Thales

Centre National De La Recherche Scientifique

Université Paris-saclay

Université Paris-sud 11

Université Paris—sud

Julie Grollier

Vincent Cros

Frédéric Nguyen Van Dau

Nicolas Locatelli

Albert Fert

Manuel Bibes

Bruno Marcilhac

Henri Jaffres

Jean-Claude Mage

Damien Querlioz

Paolo Bortolotti

Jacques Droulez

Paolo Bondavalli

Vincent Garcia

Pierre Bessiere

Jean-Marie George

Daniele Pinna

Frédéric Petroff

Alexey Vasilyevich Khvalkovskiy

Manuel Munoz Sanchez

Juan Trastoy

Miguel ÁLvaro Romera

Philippe Talatchian

The invention relates to a synaptic chain of neural networks, the synaptic chain comprising synapses, each synapse being a spintronic resonator, the spintronic resonators being electrically connected in series by a transmission line and being alternately connected.

Synaptic chain comprising spintronic resonators based on the spin diode effect, and neural network comprising such a synaptic chain

The invention relates to a neural network comprising:

Neural network comprising spintronic resonators

The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses,

Neuromimetic network and related production method

A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Device for generating a random electrical signal and associated architecture

This circuit includes a random network, said random network including: nodes, each node being formed with a pad forming an electric contact borne on a face of a substrate; and links between nodes, each link being formed with at least one unidimensional nanometric object with variable and non-volatile resistance having a configured resistance subsequently to the application of a suitable stimulus between at least one pair of pads connected through said link.

Neuromimetic circuit and method of fabrication

An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Spintronic oscillator, and use thereof in radiofrequency devices

A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network

The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers

The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.

Control device for reversing the direction of magnetisation without an external magnetic field

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Paris, France

Julie Grollier