Entegris, Inc.

Julie Cissell

Chongying Xu

David Walter Peters

William Hunks

Thomas M Cameron

A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe); Ti(NMeEt); Ti(NEt);TiCl4; tBuN&#x2550;Nb(NEt); tBuN&#x2550;Nb(NMe); t-BuN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NEt); t-AmN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NMe); t-AmN&#x2550;Nb(OBu-t); Nb-13; Nb(NEt); Nb(NEt); Nb(N(CH)); Nb(OC2H); Nb(thd)(OPr-i); SiH(OMe); SiCU; Si(NMe); (MeSi)NH; GeRx(OR)wherein x is from 0 to 4, each Ris independently selected from H or C-Calkyl and each Ris independently selected from C-Calkyl; GeCl; Ge(NR)wherein each Ris independently selected from H and C-Calkyl; and (RGe)NH wherein each Ris independently selected from C-Calkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

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Houston, TX, United States of America

Julie Cissell