Infineon Technologies Ag

Julie Aunis

Winfried Kamp

Siegmar Koeppe

Andreas Kuesel

A method of testing a latch based memory device is disclosed. The latch based memory device includes a number of latches, electrical connections and a circuit environment of the latches. A storage functionality of the latches can be tested during a first test phase while a functionality of the electrical connections and the circuit environment of the latches can be tested during a second test phase.

Latch based memory device

A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.

Various methods for determining a layout of an integrated circuit are described. For example, a method is described comprising determining a layout of an integrated circuit comprising a plurality of functional cells, wherein a maximum extent of each of the cells in a first direction is identical and wherein an outer boundary of a first cell of the plurality of cells forms a first polygon with at least five corner points; and storing data representing the layout on a computer-readable medium. Integrated circuits in accordance with the layout are also described.

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Munich, Germany

Julie Aunis