Rheinisch-westfalische Technische Hochschule (rwth) Aachen

Rheinisch-westfalische Technische Hochschule Aachen

Julian Pries

Matthias Wuttig

Shuai Wei

Xiaoling Lu

Yudong Cheng

A phase-change memory () for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory (). A method for non-volatile storage of binary contents in a phase-change memory (), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory ().

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Aachen, Germany

Julian Pries