Varian Semiconductor Equipment Associates, Inc.

Eaton Corporation

Applied Materials, Inc.

Ibis Technology Corporation

Entegris, Inc.

Other

Ibis Technology Coporation

Julian G Blake

Dale K Stone

Frank Sinclair

David E Suuronen

Lyudmila Stone

Peter H Rose

Richard S Muka

Adam A Brailove

Michael W Osborne

Steven M Anella

Richard A Cooke

Qin Chen

Paul J Murphy

Steven Raymond Walther

Jonathan Gerald England

Barbara J Hughey

Reuel B Liebert

Jonathan David Fischer

Zhongmin Yang

William Tyler Weaver

Peter Lawrence Kellerman

Kenneth Harry Purser

Deepak Arabagatte Ramappa

Christopher A Rowland

Alexander C Kontos

Klaus Petry

I-Kuan Lin

Scott C Holden

Steven Richards

Paul Forderhase

Bernhard F Cordts, Iii

Richard F McRay

Weilin Tu

Lyudmila Menn

Mary Jones

David Chipman

Robert Becker

Morgan Evans

Jason M Schaller

Timothy J Miller

Robert Brent Vopat

Russell J Low

David T Blahnik

Nicholas P T Bateman

Richard John Hertel

James D Strassner

Kevin M Daniels

D Jeffrey Lischer

Dawei Sun

Paul E Pergande

Kyu-Ha Shim

Frederick M Carlson

Peter Nunan

Hillman Bailey

Gary E Dickerson

Helen L Maynard

Eric D Wilson

Ala Moradian

William Leavitt

Steven Donnell

Piero Sferlazzo

Chandra Venkatraman

Sandeep Mehta

Shigeo Oshiro

Jinning Liu

Kurt T Decker-Lucke

James Carroll

Ukyo Jeong

Yuri Erokhin

Michael C King

Mayur Jagtap

David J Chipman

Paul S Buccos

Edward Macintosh

Ron Serisky

Peter R Younger

Dursun Moore

Sankar Ganesh Kolappan

Gregory Redinbo

Steven Campbell

A heater assembly that that is effective at maintaining heating lamps at acceptable temperatures is disclosed. The heater assembly utilizes radiative heat transfer to transfer unwanted heat buildup in the heating lamps to a cooling base. One or more high emissivity films are disposed between the heating lamps and the cooling base to facilitate heat transfer. Further, a reflective coating is applied to a portion of the heating lamps to reflect heat away from the cooling base. The heater assembly may be utilized in a high vacuum environment as it does not rely on convective cooling.

Active cooling of quartz enveloped heaters in vacuum

An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to a front side of the substrate, opposite the back side of the substrate.

System apparatus and method for enhancing electrical clamping of substrates using photo-illumination

An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy, equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to the back side of the substrate.

A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Carbon nanotube electrostatic chuck

A substrate assembly may include a substrate base; and a low emission implantation mask, disposed on the substrate base. The low emission implantation mask may include a carbon-containing material, the carbon-containing material comprising an isotopically purified carbon, formed from aC carbon isotope precursor.

Low emission implantation mask and substrate assembly

A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.

System and method for reduced workpiece adhesion due to electrostatic charge during removal from a processing station

An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising aC layer, theC layer having an outer surface, facing the cavity.

Low emission cladding and ion implanter

In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

Diffusion resistant electrostatic clamp

An ion implanter may include an electrostatic clamp to hold a substrate; a plasma flood gun generating a flux of electrons impinging upon the substrate; and a controller coupled to the plasma flood gun and including a component generating a control signal responsive to a measurement signal, the control signal to adjust operation of the plasma flood gun to a target operating level. At the target operating level the flux of electrons may comprise a stabilizing dose of electrons, the stabilizing concentration of electrons, the stabilizing concentration reducing a clamp current variation in the electrostatic clamp to a target value, the target value being less than a second value of clamp current variation when the plasma flood gun is not operating.

Method for implantation of semiconductor wafers having high bulk resistivity

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

Textured silicon liners in substrate processing systems

An electrostatic chuck with LED heating is disclosed. The electrostatic chuck with LED heating comprises a first subassembly, which comprises a LED heater, and a second subassembly, which comprises an electrostatic chuck. The LED substrate heater subassembly includes a base having a recessed portion. A plurality of light emitting diodes (LEDs) is disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The second subassembly, which comprises an electrostatic chuck, is disposed on the LED substrate heater subassembly. The electrostatic chuck includes a top dielectric layer and an interior layer that are transparent at the wavelength emitted by the LEDs. One or more electrodes are disposed between the top dielectric layer and the interior layer to create the electrostatic force.

Electrostatic chuck with LED heating

In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10to about 10ohms per square.

High conductivity electrostatic chuck

A system and method for modulating and controlling the localized temperature of a workpiece during processing is disclosed. The system uses a platen having one or more walls, defining a plurality of discrete regions on the top surface of the platen. When a workpiece is disposed on the platen, a plurality of compartments is created, where each compartment is defined by the back side of the workpiece and a respective region of the platen. The pressure of back side gas in each of the compartments can be individually controlled. The pressure of back side gas determines the amount of heat that is transferred from the workpiece to the platen. By locally regulating the pressure of back side gas, different regions of the workpiece can be maintained at different temperatures. In some embodiments, a plurality of valves is used to control the flow rate to the compartments.

Control of workpiece temperature via backside gas flow

Growing community of inventors

Gloucester, MA, United States of America

Julian G Blake