Merck Patent Gmbh

Julian Dlugosch

Peer Kirsch

Henning Seim

Marc Tornow

Sebastian Resch

Itai Lieberman

Takuya Kamiyama

Shintaro Arai

Mansour Moinpour

The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Electronic switching device

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Two bit memory device and method for operating the two-bit memory device and electronic component

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Munich, Germany

Julian Dlugosch