Infineon Technologies Ag

Julia Zischang

Carsten Schaeffer

Evelyn Napetschnig

Joachim Hirschler

Oliver Humbel

Thomas Rupp

Jens Brandenburg

Christoffer Erbert

A method of manufacturing a semiconductor device includes forming a wiring metal layer structure; forming a dielectric layer structure arranged directly on the wiring metal layer structure; and forming a bonding pad metal layer structure arranged, at least partially, directly on the dielectric layer structure, wherein a layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure, wherein the wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

Semiconductor device including bonding pad metal layer structure

A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

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Villach, Austria

Julia Zischang