Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Thales

Schneider Electric Industries Sas

Commissariat a L'energie Atomique Et Aux Energies

Julia Simon

Hubert Bono

Patrick Le Maitre

Tristan Caroff

Carole Pernel

Nicolas Michit

François Levy

Mitova Radoslava

Quentin Abadie

Virginie Maffini Alvaro

Clément Ballot

Stéphane Altazin

Fabian Rol

Paolo De Martino

Tristan Garoff

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength λ. The light-emitting diode comprises an active stack with a cutoff wavelength Ac shorter than λand a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to λ.

Optoelectronic device including a light-emitting diode stacked on a photodetector

A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element Aand a second element A, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.

Doped semiconductor layer forming method

A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

Method of manufacturing an optoelectronic device comprising a plurality of diodes

A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Process for fabrication of an optoelectronic device comprising a plurality of diodes

An emissive display device including LEDs, including a plurality of pixels, each including: an elementary control cell formed inside and on top of a semiconductor substrate; a first LED capable of emitting in a first wavelength range, arranged on the upper surface of the elementary control cell and having a first conduction region connected to a first connection pad of the elementary control cell; and a second LED capable of emitting in a second wavelength range, having a surface area smaller than that of the first LED, arranged on the upper surface of the first LED opposite a central region of the first LED, and having a first conduction region connected to a second connection pad of the elementary control cell via a first conductive via crossing the first LED.

Emissive display device comprising LEDs

The invention relates to an apparatus comprising a functional component likely to be thermally overloaded during the operation thereof, and a system for cooling the component, comprising: a thermoelectric module comprising a cold surface and a hot surface, the cold surface being thermally coupled with the component; a heat sink thermally coupled with the hot surface of the module, the heat sink including an exchange surface with the surrounding environment and at least one cell containing a phase-change material (PCM), the PCM material contained in the cell or cells being suitable for melting when the heat released from the cold surface of the module is that of the thermally overloaded component, the exchange surface being suitable for bringing the PCM material from the molten phase to the solid phase thereof when the heat released from the cold surface of the module is that of the operational component which is not thermally overloaded.

Apparatus comprising a functional component likely to be thermally overloaded during the operation thereof and a system for cooling the component

The device for generating current and/or voltage includes means for making a fluid flow between an inlet and an outlet of the device, and a thermoelectric module having a first active surface exposed to the fluid. The thermoelectric module includes apertures, and is placed in the path of the fluid between the inlet and the outlet of the device, the first active surface being substantially perpendicular to the direction of flow of the fluid.

Growing community of inventors

Grenoble, France

Julia Simon