Micron Technology Incorporated

Jukuan Zheng

Kevin Lee Baker

Sri Sai Sivakumar Vegunta

Efe Sinan Ege

Josiah Jebaraj Johnley Muthuraj

Methods of manufacturing memory devices having memory cells and corresponding selectors, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a memory device includes (a) removing a protection layer formed over the memory cells and (b) forming a cap layer over the memory cells before forming a conductive via through the memory device. The cap layer is configured to protect the memory cells during operation and can comprise a resistive material. The protection layer can be more efficiently removed with improved process margin and less device health impact using a polishing process before the conductive via is formed, thus increasing the manufacturing margin of the memory device.

Growing community of inventors

Boise, ID, United States of America

Jukuan Zheng