Powerchip Semiconductor Manufacturing Corporation

Juin Jei Liou

Ching-Sung Ho

Feibo Du

Wenqiang Song

A silicon-controlled rectifier includes a substrate of a first conductivity type; a deep well region of a second conductivity type; a well regions of the first conductivity type and the second conductivity type; a first, second and third heavily doped active regions of the first conductivity type; a first, second and third heavily doped active regions of the second conductivity type; and a first, second and third shallow trench isolation structures. A reverse diode formed in the third heavily doped active region of the second conductivity type and the well region of the first conductivity type is embedded, and a forward diode is formed in the heavily doped active region of the first conductivity type and the well region of the second conductivity type. By sharing the third heavily doped active region of the second conductivity type across the well regions of different conductivity types, two back-to-back diodes are formed.

Silicon-controlled rectifier with back-to-back diodes

A dual-directional silicon-controlled rectifier includes: a substrate, a well region, a shallow trench isolation structure, heavily doped regions of a first conductive type, heavily doped regions of a second conductive type, and ESD implantations of the first conductive type. Four active regions are provided side by side in the well region. Forward and reverse SCRs and the ESD implantations are provided in the middle active regions. Forward and reverse diodes are provided in the active regions on both sides. One of the heavily doped regions of the first conductive type in contact with the ESD implantations is disposed between the SCRs and the diodes, so as to be electrically connected to a heavily doped region of the second conductive type of the diodes.

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Taipei, Taiwan

Juin Jei Liou