Taiwan Semiconductor Manufacturing Comp. Ltd.

Powerchip Semiconductor Corporation

Jui-Yu Pan

Yun-Chi Wu

Tsung-Yu Yang

Kuo-Chyuan Tzeng

Chung-Jen Huang

Cheng-Bo Shu

Jing-Ru Lin

Yueh-Chieh Chu

Chang-Chih Huang

Lee-Chuan Tseng

Cheng-Yuan Hsu

Ying-Hua Chen

I-Chun Chuang

Chih-Wei Hung

Ming-Hui Shen

Chung-Jen Hwang

Various embodiments of the present application are directed towards an integrated chip including a first conductive interconnect structure overlying a substrate. A first memory stack is disposed on the first conductive interconnect structure. A second conductive interconnect structure overlies the first memory stack. The second conductive interconnect structure is spaced laterally between opposing sidewalls of the first conductive interconnect structure. A third conductive interconnect structure is disposed on the first conductive interconnect structure. A top surface of the third conductive interconnect structure is vertically above the second conductive interconnect structure.

Bit line and word line connection for memory array

Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.

Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate

Various embodiments of the present application are directed towards a method for forming an integrated chip. The method includes forming a dielectric structure over a substrate. A first conductive wire is formed along the dielectric structure. The first conductive wire extends laterally along a first direction. A memory stack is formed on a top surface of the first conductive wire. A second conductive wire is formed over the memory stack. The second conductive wire extends laterally along a second direction orthogonal to the first direction. An upper conductive via is formed on the top surface of the first conductive wire. An upper surface of the upper conductive via is above the second conductive wire.

Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region

Various embodiments of the present application are directed towards an integrated chip. The integrated chip includes an array overlying a substrate and including multiple memory stacks in a plurality of rows and a plurality of columns. Each of the memory stacks includes a data storage structure having a variable resistance. A plurality of word lines are disposed beneath the array and extend along corresponding rows of the array. The word lines are electrically coupled with memory stacks of the array in the corresponding rows. A plurality of upper conductive vias extend from above the array of memory stacks to contact top surfaces of corresponding word lines.

The present disclosure relates to a method of forming an embedded flash memory cell that provides for improved performance by providing for a tunnel dielectric layer having a relatively uniform thickness, and an associated apparatus. The method is performed by forming a charge trapping dielectric structure over a logic region, a control gate region, and a select gate region within a substrate. A first charge trapping dielectric etching process is performed to form an opening in the charge trapping dielectric structure over the logic region, and a thermal gate dielectric layer is formed within the opening. A second charge trapping dielectric etching process is performed to remove the charge trapping dielectric structure over the select gate region. Gate electrodes are formed over the thermal gate dielectric layer and the charge trapping dielectric structure remaining after the second charge trapping dielectric etching process.

Integrated chip having a logic gate electrode and a tunnel dielectric layer

The present disclosure relates to integrated circuit device manufacturing processes. A self-aligned double patterning method is provided. In the method, a lithography process for line cut that determines the locations of line termini is performed after forming a spacer layer alongside the mandrel and prior to stripping the mandrel. The lithographic mask for the line cut is aligned to the mandrel and the spacer layer using a mark made of the mandrel material and the spacer material. Compared to the previous approach where the line cut process is performed after the mandrel removal, in the disclosed approach, the line termini mask is made of the mandrel material and the spacer material, and is more distinguishable compared to a mark made of just the spacer material. Thereby, the methods provide robust photo alignment signal for the line cut photolithography and precise positioning of the line termini mask.

Self-aligned double patterning (SADP) method

Method to fabricate uniform tunneling dielectric of embedded flash memory cell

A method for manufacturing a memory device includes forming trenches in a substrate to define an active region, filling an insulation material in the trenches, treating at least one portion of the insulation material, removing an upper portion of the insulation material from the trenches, so as to expose upper portions of side surfaces of the active region and to convert remaining portions of the insulation material in the trenches to shallow trench isolation (STI) disposed on opposite sides of the active region, forming a lower oxide layer, a middle charge trapping layer, and an upper oxide layer which cover the exposed upper portions of the side surfaces of the active region, an upper surface of the active region between the side surfaces of the active region, and the STI, and forming a gate layer on the upper oxide layer.

Method for manufacturing memory device and method for manufacturing shallow trench isolation

Circuits and methods for providing a floating gate structure comprising floating gate cells having improved reverse tunnel disturb immunity. A floating gate structure is formed over a semiconductor substrate comprising a floating gate, a charge trapping dielectric layer is formed, and a control gate is formed. The floating gate structure has vertical sidewalls, one side adjacent a source region and one side adjacent a drain region. A symmetric sidewall dielectric is formed over the floating gate structure on both the source side and drain side regions. An asymmetric dielectric layer is formed over the drain side sidewall only. The use of the asymmetric sidewall on the drain side sidewall provides improved RTD immunity. Methods for forming the structure are disclosed.

Reverse disturb immune asymmetrical sidewall floating gate devices

A method for manufacturing flash memory is provided. A tunneling dielectric layer, a conductive layer and a patterned mask layer that exposes a portion of the conductive layer are formed on a substrate. An oxide layer is formed on the exposed conductive layer so that the conductive layer is partitioned through the oxide layer into blocks. The oxide layer is removed and an inter-gate dielectric layer is formed in the opening. A control gate that completely fills the opening is formed. A cap layer is formed over the control gate. The mask layer is then removed. Using the cap layer as a mask, a portion of the conductive layer is removed to form two floating gates under the control gate. An insulating layer is formed on the substrate. Source/drain regions are formed in the substrate on the respective sides of the control gate.

Flash memory and manufacturing method thereof

A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.

Growing community of inventors

Neipu, Taiwan

Jui-Yu Pan