Nan Ya Technology Corporation

Jui-Seng Wang

Yi-Yi Chen

Chih-Ying Tsai

Yu-Chen Huang

The present application provides a method of processing a substrate. The method of processing the substrate includes steps of forming a photosensitive layer on the substrate; performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask; performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern; performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask; performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and performing an etching process to remove portions of the substrate exposed by the target pattern.

Method of processing a substrate

The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a contact structure, a first conductive element, and a first dielectric spacer structure. The semiconductor substrate includes an active region and an isolation structure. The contact structure is on the active region of the semiconductor substrate. The first conductive element is on the isolation structure of the semiconductor substrate. The first dielectric spacer structure is between the contact structure and the first to conductive element. The first dielectric spacer structure has a first concave surface facing the first conductive element.

Semiconductor structure having contact structure

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a semiconductor substrate including an active region and an isolation structure. The method also includes forming a contact structure on the active region of the semiconductor substrate. The method further includes forming a dielectric spacer on opposite sides of the contact structure. The method also includes forming a conductive element on the isolation structure of the semiconductor substrate, wherein the dielectric spacer has a concave surface facing the conductive element.

Method of manufacturing semiconductor structure having contact structure

A method for fabricating a semiconductor structure includes: providing a substrate and a dielectric layer on the substrate; and forming an etching mask on the dielectric layer; and etching the dielectric layer using the etching mask to form at least one opening therein. The etching mask includes: a hard mask layer, a photoresist layer, and a hexamethyldisilazane (HMDS) layer. The photoresist layer is located over the hard mask layer, and the HMDS layer is located between the hard mask layer and the photoresist layer.

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Taipei, Taiwan

Jui-Seng Wang