Taiwan Semiconductor Manufacturing Comp. Ltd.

Jui-Ping Chuang

Chen-Hsiang Lu

Fei-Gwo Tsai

Che-Cheng Chang

Wei-Ting Chen

Yu-Cheng Liu

Li-Kong Turn

Hsueh-Yi Chung

Chi-Hung Liao

Kuei-Shun Chen

Shih-Chi Fu

Shao-Yen Ku

Tzong-Sheng Chang

Meng-Wei Chen

Chung-Hao Chang

Wei-Ti Hsu

Ming-Shane Lu

Yi-Rem Chen

Yung-Cheng Chen

Chun-Li Chou

Pei-Hung Chen

Weibo Yu

Chien-Kang Chou

Chen-Fa Lu

Tien-Chen Hu

Chun-Hao Chang

Chen-Peng Fan

Chin-Hsiung Ho

Mei-Yen Li

Shih-Ming Wang

Shang-Yun Huang

Yung-cheng Chen

Tain-Chen Hu

Jim-Jey Huang

Long-Shang Chuang

A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Method of fabricating reticle

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.

Structure of semiconductor device structure having fins

A developing method is provided. The developing method includes rotating a wafer. The developing method also includes dispensing, through a first nozzle, a developer solution onto the rotated wafer through a first nozzle at a first rotating speed. The developing method further includes dispensing, through a second nozzle, a rinse solution onto the rotated wafer through a second nozzle at a second rotating speed. The second rotating speed is less than the first rotating speed. In addition, the developing method includes simultaneously moving the first nozzle and the second nozzle during either the dispensing of the developer solution or the dispensing of the rinse solution.

Developing method

A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the gate dielectric layer, and a lower width of the isolation element is greater than an upper width of the isolation element.

Structure and formation method of semiconductor device structure

A developing method comprises steps as follows. A wafer is rotated. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved back and forth between a first position and a second position, in which moving the first nozzle back and forth is performed such that the first nozzle moving forward to the second position is reversed at the second position and that the first nozzle moving forward to the first position is reversed at the first position, and the first position and the second position are directly over the wafer, and the developer solution is dispensed through the first nozzle when moving the first nozzle back and forth between the first position and the second position.

A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

Method for forming semiconductor device structure

A developing method includes rotating a wafer. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved from a first position to a second position. The first position and the second position are over the wafer and within a perimeter of the wafer when viewed from a top of the wafer. The developer solution is dispensed through the first nozzle when moving the first nozzle from the first position to the second position. The first nozzle is moved back from the second position to the first position immediately after the first nozzle is moved from the first position to the second position. The developer solution is dispensed through the first nozzle when moving the first nozzle from the second position to the first position.

Exposure method of wafer substrate, manufacturing method of semiconductor device, and exposure tool

Structure and formation method of semiconductor device with metal gate

Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.

Systems and methods for edge bead removal

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the gate dielectric layer, and a lower width of the isolation element is greater than an upper width of the isolation element

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Hsinchu, Taiwan

Jui-Ping Chuang