Industrial Technology Research Institute

Jui-Mei Hsu

Chen-Der Tsai

Chen-Chung Du

Chih-Chiang Weng

A semiconductor structure, a light-emitting device and a manufacturing method for the same are provided. The light-emitting device includes a light emitting diode and a conductive film. The conductive film contains quantum dots and is disposed on the light emitting diode.

Semiconductor structure, light-emitting device and manufacturing method for the same

A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.

Growing community of inventors

Zhubei, Taiwan

Jui-Mei Hsu