Taiwan Semiconductor Manufacturing Comp. Ltd.

Jui-Hsuan Chen

Yee-Chia Yeo

Chii-Horng Li

Ming-Hua Yu

Tsz-Mei Kwok

Yi-Fang Pai

Heng-Wen Ting

Jung-Chi Tai

Jeng-Wei Yu

Tsung-Hsi Yang

Cheng-Hsiung Yen

A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.

Epitaxy regions with large landing areas for contact plugs

Growing community of inventors

Hsinchu, Taiwan

Jui-Hsuan Chen