Lg Electronics Inc.

Shangrao Jinko Solar Technology Development Co., Ltd

Trina Solar Co., Ltd.

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Juhwa Cheong

Junyong Ahn

Sungjin Kim

Youngsung Yang

Wonjae Chang

Jaesung Kim

Jungmin Ha

Manhyo Ha

Yongduk Jin

Seongeun Lee

Hyungwook Choi

Jiweon Jeong

Yiyin Yu

Haejong Cho

Younggu Do

Donghae Oh

Hyunjung Park

Gyeayoung Kwag

Kyungdong Lee

Sangwook Park

Minho Choi

Taeyoung Kwon

Jisoo Ko

Mann Yi

Yundeok Yoon

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Solar cell and method for manufacturing the same

The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

Solar cell and solar cell panel including same

In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.

Solar cell panel manufacturing method and paste for solar cell electrode used therefor

A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

Solar cell and method of manufacturing the same

Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

Solar cell

Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570&#xb0; C. to 700&#xb0; C. to anneal the silicon oxide film.

Method of manufacturing solar cell

A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

Growing community of inventors

Seoul, South Korea

Juhwa Cheong