Amorepacific Corporation

Fairchild Korea Semiconductor Ltd.

Sungkyunkwan University

Juho Kim

Jungsun Choi

Kyoungmin Lee

Young Sung Kim

Junyoung Kim

Youngho Son

Jeongin Lee

Jaichan Lee

Joonyoung Kim

Yunheui Lee

Hakchan Kim

Duckki Kwon

Eunchul Kang

Byongsung Lee

Leejun Kim

Hyeran Ji

Hakchan 733-1103 Daelim Solgeo Apt Kim

Hoyoung Kim

The present invention relates to a cosmetic container provided with a rubber discharge pad, in which: a rubber discharge pad having a plurality of discharge ports is coupled to a container body, and when the rubber discharge pad is pressed, the rubber discharge pad is pressed to the bottom of the container body by elasticity such that the content accommodated in the container body is capable of being used without residual content; and since the content accommodated in the container body is discharged through the discharge ports of the rubber discharge pad, the expansion size of the discharge ports varies according to a force of pressing the discharge pad such that a discharge quantity of the content can be adjusted.

Cosmetic container provided with rubber discharge pad

The present invention relates to a liquid content container comprising a tension member, comprising: a container body () for accommodating content; an adaptor () provided at the upper end of the container body (); a shoulder member () coupled to the upper end of the container body (); the tension member () provided at the shoulder member (); a distributing member () coupled to the shoulder member (); and the discharge member () coupled to the distributing member ().

Liquid content container comprising tension member

A low-voltage and over-voltage detection circuit receives a power source voltage, generates a shift voltage by shifting the received voltage to a predetermined level, and fixes the shift voltage as a clamping voltage when the shift voltage is higher than a predetermined clamping voltage. The low-voltage and over-voltage detection circuit includes a first transistor and a second transistor. The first transistor generates a regulator voltage that varies according to the power source voltage and performs a switching operation according to the shift voltage and the regulator voltage, and the second transistor is connected in parallel with the first transistor and generates hysteresis. The low-voltage and over-voltage detection circuit determines whether the power source voltage is a low-voltage or an over-voltage by using a drain voltage generated according to currents flowing to the first and second transistors.

Under-voltage and over-voltage detection circuit and driving method thereof

The present invention relates to a control device of a light emitting device that includes a plurality of LED rows formed of a plurality of LEDs sequentially connected in series. The control device includes: a plurality of switches respectively connected to the plurality of LED rows and sequentially transmitting a detection voltage of each of the plurality of LED rows, wherein the detection voltage corresponds to an output voltage applied to the plurality of LED rows; a comparator receiving the plurality of detection voltages, and generating a clock control signal according to a result of comparison with a predetermined reference; a clock signal generator generating a clock signal having a period that is changed according to the clock control signal; and a shift register that controls switching operations of the plurality of switches according to the clock signal.

Control device and LED light emitting device using the control device

A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices. In addition, the size of devices can be compacted and a low voltage drive can be achieved.

Dielectric device having multi-layer oxide artificial lattice with lattice directional feature

Growing community of inventors

Seoul, South Korea

Juho Kim