Samsung Electronics Co., Ltd.

Sungkyunkwan University

Juhee Lee

Jinhong Park

Bongjin Kuh

Sahwan Hong

Maksim Andreev

Jiwan Koo

Seunghwan Seo

A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.

Semiconductor devices

Growing community of inventors

Ansan-si, South Korea

Juhee Lee