Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Jugo Mitomo

Tatsushi Hamaguchi

Susumu Sato

Hiroshi Nakajima

Masamichi Ito

Hironobu Narui

Tomonori Hino

Noriyuki Futagawa

Hidekazu Kawanishi

Nobukata Okano

Shoichiro Izumi

Tsuyoshi Nagatake

Kei Satou

Rintaro Koda

Yasuo Sato

Yoshiaki Watanabe

Osamu Maeda

Motoi Kimura

Masaki Shiozaki

Mikihiro Yokozeki

Takayuki Kawasumi

Akira Ohmae

Yuichi Kuromizu

Shota Watanabe

Masayuki Arimochi

Tomomori Hino

Tadahiko Kawasaki

Noriko Kobayashi

Michiko Komine

A light emitting element according to the present disclosure includes a first light reflecting layer, a laminated structure, and a second light reflecting layerlaminated to each other. The laminated structureincludes a first compound semiconductor layer, a light emitting layer, and a second compound semiconductor layerlaminated to each other from a side of the first light reflecting layer. Light from the laminated structureis emitted to an outside via the first light reflecting layeror the second light reflecting layer. The first light reflecting layerhas a structure in which at least two types of thin filmsA andB are alternately laminated to each other in plural numbers. A film thickness modulating layeris provided between the laminated structureand the first light reflecting layer

Light emitting element

A light-emitting element includes: a laminated structure bodywhich is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layerincluding a first surfaceand a second surfacethat is opposed to the first surface, an active layerthat faces the second surfaceof the first compound semiconductor layer, and a second compound semiconductor layerincluding a first surfacethat faces the active layerand a second surfacethat is opposed to the first surfaceare laminated; a first light reflection layerthat is provided on the first surfaceside of the first compound semiconductor layer; and a second light reflection layerthat is provided on the second surfaceside of the second compound semiconductor layer. The first light reflection layerincludes a concave mirror portion, and the second light reflection layerhas a flat shape.

Light-emitting element and method of manufacturing the same

A light emitting element assembly includes: a light emitting element (); a light emitting element drive unit (); a first joining member () connected to an electrode provided in the light emitting element (); and a second joining member () provided on the light emitting element drive unit (). In the light emitting element assembly, one of the first joining member () and the second joining member () includes an alloy material, the other one of the first joining member () and the second joining member () includes a metallic material, the joining member (the second joining member ()) including the alloy material includes a first portion () and a second portion (), the joining member (the first joining member ()) including the metallic material and the first portion () are joined to each other, and the second portion () is provided on the light emitting element drive unit () between the light emitting element () and the light emitting element drive unit (), and is in contact with the light emitting element ().

Light emitting element assembly, multi-beam laser chip assembly and stereolithographic apparatus, and member assembly and method for manufacturing the same

A surface emission laser driving method according to an embodiment of the present technology includes the following two steps. (A) Generating drive pulses to be sequentially outputted to, out of a plurality of surface emission lasers disposed on a same substrate, each of the surface emission lasers selected as light-emission targets, on the basis of the number of surface emission lasers selected as the light-emission targets and a monitoring temperature that is immediately prior to light emission of each of the surface emission lasers selected as the light-emission targets. (B) Outputting the generated drive pulses to each of the surface emission lasers selected as the light-emission targets.

Surface emission laser driving method and surface emission laser device

A light emitting element of the present disclosure includes a compound semiconductor substrate, a stacked structureincluding a GaN-based compound semiconductor, a first light reflection layer, and a second light reflection layer. The stacked structureincludes, in a stacked state a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The first light reflection layeris disposed on the compound semiconductor substrateand has a concave mirror section. The second light reflection layeris disposed on a second surface side of the second compound semiconductor layerand has a flat shape. The compound semiconductor substrateincludes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted. Provided is a method of manufacturing a light-emitting module including: a plurality of light-emitting element arrays each including, in a plane parallel to resonator length of a light-emitting element, a plurality of the light-emitting elements arranged along a width direction perpendicular to a direction of the resonator length; and a substrate on which the plurality of light-emitting element arrays is mounted, the method including arranging the plurality of light-emitting elements on the substrate at predetermined intervals along the width direction in the light-emitting module, by causing side surfaces of the respective light-emitting element arrays adjacent to each other along the width direction to be in contact with each other and mounting the respective light-emitting element arrays on the substrate.

Method of manufacturing light-emitting module, light-emitting module, and device

A stereolithography apparatus according to an embodiment of the present technology includes a light source unit, a photo-detector, and a control unit. The light source unit includes a plurality of light-emitting elements that emits light for curing a photo-curing resin. The photo-detector detects the light emitted from the light source unit. The control unit generates an amount-of-light profile indicating an amount-of-light distribution of the light on the basis of the light detected by the photo-detector and controls light emission of the plurality of light-emitting elements on the basis of the amount-of-light profile.

Stereolithography apparatus and light emission control method

A light emitting element includes: a laminated structureobtained by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a first light reflecting layerdisposed on a first surface side of the first compound semiconductor layer; a second light reflecting layerdisposed on a second surface side of the second compound semiconductor layer; and light convergence/divergence changing means. The first light reflecting layeris formed on a concave mirror portion. The second light reflecting layerhas a flat shape. When light generated in the active layeris emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing meansis different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means

Light emitting element and light emitting element array

A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structurewhich includes a GaN-based compound semiconductor and in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layerare stacked, and forming a concave mirror sectionon a first surface side of the first compound semiconductor layer; then (B) forming a photosensitive material layerover the second compound semiconductor layer; and thereafter (C) exposing the photosensitive material layerto light from the concave mirror section side through the stacked structure, to obtain a treatment mask layer including the photosensitive material layer, and then processing the second compound semiconductor layerby use of the treatment mask layer.

Light emitting element and manufacturing method therefor

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

Light-emitting device and method of manufacturing light-emitting device

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Surface emitting laser and method of manufacturing the same

A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

Growing community of inventors

Kanagawa, Japan

Jugo Mitomo