International Business Machines Corporation

Siemens Aktiengesellschaft

Other

Siemens Microelectronics Limited

Juergen Wittmann

Carl John Radens

Wolfgang Bergner

Jack Allan Mandelman

Gary Bela Bronner

Jochen C Beintner

Ulrike Gruening

Paul Christian Parries

Scott David Halle

Max Gerald Levy

Matthew J Sendelbach

George R Goth

Jeffrey John Welser

Matthias Ilg

William C Wille

Bruno Spuler

Martin Gutsche

Bernhard Fiegl

Tinghao T Wang

A method includes forming a trench capacitor in a semiconductor body. A recess is formed in the upper portion of the capacitor with such recess having sidewalls in the semiconductor body. A first material is deposited over the sidewalls and over a bottom of the recess. A second material is deposited over the first material. A mask is provided over the second material. The mask has: a masking region to cover one portion of said recess bottom; and a window over a portion of said recess sidewall and another portion of said recess bottom to expose underlying portions of the second material. Portions of the exposed underlying portions of the second material are selectively removing while leaving substantially un-etched exposed underlying portions of the first material. The exposed portions of the first material and underlying portions of the semiconductor body are selectively removed. An isolation region is formed in the removed portions of the semiconductor body. The mask is provided over the second material with a masking region covering one portion of said recess sidewall and one portion of said recess bottom and with a window disposed over an opposite portion of said recess sidewall and an opposite portion of said recess bottom to expose underlying portions of the second material. Etching is provided into the exposed underlying portions of the semiconductor body to form a shallow trench in the semiconductor body. An insulating material is formed in the shallow trench to form a shallow trench isolation region. With such method, greater mask misalignment tolerances are permissible.

Dynamic random access memory

A method of forming a trench capacitor comprises steps of forming a trench in a substrate, partially filling the trench with a first conductive material, lining a portion of the trench above the first conductive material with a collar material, etching the collar material to a strap depth below a top of the trench, and filling the trench with a second conductive material, wherein a portion of the second conductive material positioned between the strap depth and the top of the trench comprises a buried strap.

Method for making DRAM capacitor strap

A method for preventing CMP-induced (chemical-mechanical polish) damage to a substrate disposed below a pad nitride layer of a mesa. The pad nitride layer is disposed below a conformally deposited dielectric layer. The dielectric layer is disposed below a conformally deposited polysilicon layer. The method includes planarizing the polysilicon layer down to at least a surface of the dielectric layer using the CMP to expose a first region of the dielectric layer. The method further includes etching partially through the first region of the dielectric layer using first etch parameters. The first etch parameters include an etchant source gas that is substantially selective to the pad nitride layer to prevent the pad nitride layer from being etched through even in the presence of a CMP defect. Additionally, there is also included removing the polysilicon layer after the etching partially through the first region of the dielectric layer.

Methods for protecting device components from chemical mechanical polish

A method for forming a Self Aligned Contact in a semiconductor device includes incorporating carbon into a nitride layer during or following the formation of the nitride layer on a semiconductor substrate.

Deposition of carbon into nitride layer for improved selectivity of

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Fishkill, NY, United States of America

Juergen Wittmann