Heraeus Quarzglas Gmbh & Co Kg

Shin-Etsu Quartz Products Co., Ltd.

Fritz Egger Gmbh & Co.

Juergen Weber

Waltraud Werdecker

Martin Trommer

Tatsuhiro Sato

Sven Linow

Stefan Ochs

Bodo Kuehn

Helmut Leber

Norbert Traeger

Achim Hofmann

Rolf Gerhardt

Stefan Fuchs

Andreas Schreiber

Ulrich Kirst

Thorsten Herbert

Christian Gebauer

Tobias Pogge

Ralf Schneider

Thilo Braemer

Maximilian Kara

Armin Maul

Reinhard Sellner

SiOslurry for the production of quartz glass contains a dispersion liquid and amorphous SiOparticles with particle sizes to a maximum of 500 &#x3bc;m. The largest volume fraction is SiOparticles with particle sizes of 1 &#x3bc;m-60 &#x3bc;m, as well as SiOnanoparticles with particle sizes less than 100 nm constituting 0.2-15% volume by weight of the entire solids content. To prepare the slurry for use and optimize its flow behavior for later processing by dressing or pouring the slurry mass, and for later drying and sintering without cracks, the slurry has SiOparticles with a multimodal distribution of particle sizes, with a first maximum in the range 1 &#x3bc;m-3 &#x3bc;m and a second maximum in the range 5 &#x3bc;m-50 &#x3bc;m, and an 83%-90% solids content by weight of the SiOparticles and the SiOnanoparticles together.

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A known SiOslurry for the production of quartz glass contains a dispersion liquid and amorphous SiOparticles with particle sizes to a maximum of 500 &#x3bc;m, wherein the largest volume fraction is composed of SiOparticles with particle sizes in the range 1 &#x3bc;m-60 &#x3bc;m, as well as SiOnanoparticles with particle sizes less than 100 nm in the range 0.2-15% volume by weight (of the entire solids content). In order to prepare such a slurry for use, and to optimize the flow behavior of such a slurry with regard to later processing by dressing or pouring the slurry mass, and with regard to later drying and sintering without cracks, the invention suggests a slurry with SiOparticles with a multimodal distribution of particle sizes, with a first maximum of the sizes distribution in the range 1 &#x3bc;m-3 &#x3bc;m and a second maximum in the range 5 &#x3bc;m-50 &#x3bc;m, and a solids content (percentage by weight of the SiOparticles and the SiOnanoparticles together) in the range 83%-90%.

The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiOand dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

Component of quartz glass for use in semiconductor manufacture and method for producing the same

Methods for producing a quartz glass component with reflector layer are known in which a reflector layer composed of quartz glass acting as a diffuse reflector is produced on at least part of the surface of a substrate body composed of quartz glass. In order, taking this as a departure point, to specify a method which enables cost-effective and reproducible production of uniform SiOreflector layers on quartz glass components, it is proposed according to the invention that the reflector layer is produced by thermal spraying by means of SiOparticles being fed to an energy carrier, being incipiently melted or melted by means of said energy carrier and being deposited on the substrate body. In the case of a quartz glass component obtained according to the method, the SiOreflector layer is formed as a layer which is produced by thermal spraying and has an opaque effect and which is distinguished by freedom from cracks and uniformity.

Quartz glass component with reflector layer and method for producing the same

An ideal quartz glass for a wafer jig for use in an environment having an etching effect is distinguished by both high purity and high resistance to dry etching. To indicate a quartz glass that substantially fulfills these requirements, it is suggested according to the invention that the quartz glass is doped with nitrogen at least in a near-surface area, has a mean content of metastable hydroxyl groups of less than 30 wt ppm and that its fictive temperature is below 1250&#xb0; C. and its viscosity is at least 10dPa&#xb7;s at a temperature of 1200&#xb0; C. An economic method for producing such a quartz glass comprises the following method steps: melting an SiOraw material to obtain a quartz glass blank, the SiOraw material or the quartz glass blank being subjected to a dehydration measure, heating the SiOraw material or the quartz glass blank to a nitriding temperature in the range between 1050&#xb0; C. and 1850&#xb0; C. in an ammonia-containing atmosphere, a temperature treatment by means of which the quartz glass of the quartz glass blank is set to a fictive temperature of 1250&#xb0; C. or less, and a surface treatment of the quartz glass blank with formation of the quartz glass jig.

Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder

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Kleinostheim, Germany

Juergen Weber