Abb Schweiz Ag

Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Juergen Schuderer

Fabian Mohn

Felix Traub

Thomas Gradinger

Daniele Torresin

Slavo Kicin

Chunlei Liu

Daniel Kearney

Munaf Rahimo

Bruno Agostini

Peter Karl Steimer

Gerd Schlottig

Heinz Lendenmann

Jan Vobecky

Lise Donzel

Didier Cottet

Franziska Brem

Franc Dugal

Jagoda Dobrzynska

Hamit Duran

Arne Schroeder

Niko Pavlicek

Liliana Duarte

Joonas Puukko

Giovanni Salvatore

Christian Spindler

Jean-Yves Loisy

Cédric Bessire

An electrical contact arrangement electrically contacts at least two power semiconductor devices, and comprises at least two bond wires and at least three electrical contacts, comprising an alternating current contact, a positive direct current contact, and a negative direct current contact. Each electrical contact comprises a ground potential part; contact part; and insulation part on the ground potential part. The contact part is provided on the insulation part. At least two electrical contacts are separated by a gap between the insulation parts and the gap between the contact parts of the separated electrical contacts. A bond wire connects a first power semiconductor device on a contact part of the positive direct current contact with a contact part of the alternating current contact. A bond wire connects a second power semiconductor device on the contact part of the alternating current contact with a contact part of the negative direct current contact.

Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module

In one embodiment a power semiconductor module includes a substrate having a first substrate side for carrying an electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side has a flat surface and is adapted for coming in contact with a cooler. A cooling area that is surrounded by a connecting area is located at the second substrate side. A first casing component of the cooler is connected to the second substrate side at the connecting area and a second casing component is connected to the first casing component such that a cooling channel for providing the cooling area with cooling fluid is provided between the first casing component and the second casing component. A cooling structure can be welded to the cooling area at the second substrate side.

Arrangement of a power semiconductor module and a cooler

A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.

Power semiconductor module with low inductance gate crossing

One embodiment provides a method of providing a power semiconductor module with a cooler. A power semiconductor module includes a substrate having a first substrate side for carrying at least one electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side is connected to a first baseplate side and the baseplate also includes a second baseplate side being located opposite to its first baseplate side and being adapted for coming in contact with the cooler. The cooler includes a first casing component and a second casing component. The baseplate side is equipped with a cooling area that is surrounded by a connecting area.

Power semiconductor module and method of forming the same

A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

Power semiconductor module with short circuit failure mode

A power module comprises at least one power semiconductor device with an electrical top contact area on a top side; and a multi-layer circuit board with multiple electrically conducting layers which are separated by multiple electrically isolating layers, the electrically isolating layers being laminated together with the electrically conducting layers; wherein the multi-layer circuit board has at least one cavity, which is opened to a top side of the multi-layer circuit board, which cavity reaches through at least two electrically conducting layers; wherein the power semiconductor device is attached with a bottom side to a bottom of the cavity; and wherein the power semiconductor device is electrically connected to a top side of the multi-layer circuit board with a conducting member bonded to the top contact area and bonded to the top side of the multi-layer circuit board.

Power module based on multi-layer circuit board

The present application relates to a power semiconductor device, including a substrate having a first side and a second side, the first side and the second side being located opposite to each other, wherein the first side includes a cathode and the second side includes an anode, wherein a junction termination of a p/n-junction is provided at at least one surface of the substrate, preferably at at least one of the first side and the second side, the junction termination is coated by a passivating coating, the passivating coating including at least one material selected from the group consisting of an inorganic-organic composite material, parylene, and a phenol resin comprising polymeric particles. A device as described above thus addresses issues of passivation of junction terminations and thus prevents or at least reduces the danger of fatal defects such as unstable device operation caused by changes in film properties, instability, water permeability, permeability of movable ions such as sodium, pinholes and cracks, and aluminum metal disconnection or corrosion due to degradation and stress.

Power semiconductor device and method for producing a power semiconductor device

A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips are at least partially embedded onto the insulation material.

Power electronics module with first and second coolers

The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

Power semiconductor module

Growing community of inventors

Zurich, Switzerland

Juergen Schuderer