Osram Opto Semiconductors Gmbh

Juergen Off

Matthias Peter

Tobias Meyer

Joachim Hertkorn

Alexander Walter

Rainer Butendeich

Tetsuya Taki

Werner Bergbauer

Thomas Lehnhardt

Christian Leirer

Peter Stauss

Philipp Drechsel

Andreas Loeffler

Tobias Gotschke

Dario Schiavon

Korbinian Perzlmaier

Bastian Galler

Asako Hirai

The invention relates to a method for producing a nitride semiconductor component (), comprising the steps of: &#x2014;providing a growth substrate () having a growth surface () formed from a planar area () with a plurality of three-dimensionally shaped surface structures () on said planar area (), &#x2014;growing a nitride-based semiconductor layer sequence () on the growth surface (), growth beginning selectively on a growth area () of said growth substrate, and the growth area () being less than 45% of the growth surface (). The invention also relates to a nitride semiconductor component () which can be produced according to said method.

Method for producing a nitride semiconductor component, and a nitride semiconductor component

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.

Method for producing a plurality of semiconductor chips having a mask layer with openings

What is specified is a method for producing a layer structure () as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (), which has a silicon surface (), b) deposition of a first layer sequence (), which comprises a seeding layer () containing aluminum and nitrogen, on the silicon surface () of the carrier () along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (), c) three-dimensional growth of a 3D-GaN layer (), which is formed with gallium nitride, on a top surface () of the first layer sequence () which is remote from the silicon surface (), d) two-dimensional growth of a 2D-GaN layer (), which is formed with gallium nitride, on the outer surfaces () of the 3D-GaN layer () which are remote from the silicon surface ().

Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:&#x2014;depositing a first seed layer () comprising a nitride compound semiconductor material on a substrate ();&#x2014;desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate ();&#x2014;depositing a second seed layer () comprising a nitride compound semiconductor material; and&#x2014;growing the nitride compound semiconductor layer () containing a nitride compound semiconductor material onto the second seed layer ().

Method for the production of a nitride compound semiconductor layer

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

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Wuppertal, Germany

Juergen Off