Mattson Technology, Inc

Centrotherm Photovoltaics Ag

Jüergen Niess

Wilfried Lerch

Paul Janis Timans

Daniel J Devine

Yao Zhi Hu

Zsolt Nenyei

Alexander Gschwandtner

Sing-Pin Tay

Conor Patrick O'Carroll

Patrick Schmid

Manfred Falter

Wilhelm Kegel

Rudy Cardema

Igor Fidelman

A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200&#xb0; C. and an oxide growth is induced on the surface of the substrate facing the plasma.

Method for forming a layer on a substrate at low temperatures

Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Method and system for thermally processing a plurality of wafer-shaped objects

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Sontheim, Germany

Jüergen Niess