Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Juergen Moosburger

Lutz Hoeppel

Norwin Von Malm

Frank Singer

Patrick Rode

Andreas Ploessl

Hubert Halbritter

Thomas Schwarz

Peter Brick

Siegfried Herrmann

Herbert Brunner

Georg Bogner

Stefan Illek

Matthias Sabathil

Karl Weidner

Karl Engl

Walter Wegleiter

Markus Pindl

Alexander Linkov

Dominik Scholz

Britta Goeoetz

Markus Maute

Andreas Weimar

Mikko Perälä

Georg Dirscherl

Stefan Stegmeier

Peter Nagel

Paola Altieri-Weimar

Wolfgang Moench

A method for operating a display device is disclosed. In an embodiment, a method for displaying images or films via a display device includes emitting, for each radiation direction, a partial image composed of sub-pixels of all pixels belonging to this radiation direction and receiving control data for at least some of the sub-pixels at the display device by a data compression algorithm, wherein the data compression algorithm comprises a delta coding, wherein the delta coding includes an initial value, wherein the initial value includes one of the partial images defined as a main image, wherein at least some of the remaining partial images are received as deviations from the main image, and wherein edges of a three-dimensional object to be displayed are excluded from data compression when merging surfaces enclose a real angle of 135&#xb0; or less.

Method for operating an autostersoscopic display device, and autostereoscopic display device

A method for producing a component may include providing a composite including a semiconductor layer stack, a first connection layer and a second connection layer, wherein the first and second connection layers are arranged on the semiconductor layer stack, are assigned to different electrical polarities and are configured for the electrical contacting of the component to be produced, applying a molded body material on the composite for forming a molded body, such that in a plan view of the semiconductor layer stack the molded body covers the first connection layer and the second connection layer, forming a first cutout and a second cutout through the molded body for exposing the connection layers in places, and filling the first and second cutouts with an electrically conductive material for forming through contacts which are electrically conductively connected to the connection layers and extend through the molded body in the vertical direction.

Semiconductor element and method for production thereof

A method for producing a component may include providing a composite containing a semiconductor stack layer, a first exposed connection layer and a second exposed connection layer, where the connection layers are arranged on the semiconductor stack, assigned to different electrical polarities and are configured to electrically contact the component to be produced; forming a first through contact exposed in lateral directions on the first connection layer and a second through contact exposed in lateral directions on the second connection layer, where the through contacts are formed from an electrically conductive connection material; and applying a molded body material on the composite for forming a molded body, where each of the through contacts are fully and circumferentially enclosed by the molded body at least in the lateral directions, such that the molded body and the through contacts form a permanently continuous carrier which mechanically carries the component to be produced.

Method for producing a component, and a component

An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.

Optoelectronic semiconductor device and apparatus with an optoelectronic semiconductor device

A method for producing a plurality of optoelectronic semiconductor components () is provided, comprising the following steps: a) providing an auxiliary carrier (); b) providing a plurality of semiconductor chips (), wherein each of the semiconductor chips has a carrier body () and a semiconductor body () arranged on an upper side () of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (); f) removing the auxiliary carrier (); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components ().

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

The invention relates to a device (), comprising at least one optoelectronic semiconductor component () and a substrate (), on which the semiconductor component is arranged, wherein an insulating layer () is adjacent to a lateral surface () that bounds the semiconductor component; a contact track () is arranged on a radiation passage surface of the semiconductor component and is connected to an electrically conductive manner to the semiconductor component; the contact track extends beyond the lateral surface of the semiconductor component and is arranged on the insulating layer; and the contact track is relieved with respect to a thermomechanical load occurring perpendicularly to the lateral surface.

Optoelectronic semiconductor device having contact track with relieved thermo-mechanical stress

The invention relates to a semiconductor component () comprising: a plurality of semiconductor chips (), each having a semiconductor layer sequence () with an active region () for generating radiation; a radiation output side () that runs parallel to the active regions (); a mounting side surface () which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a molded body () which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure () which is arranged on the molded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device () and to a method for producing a semiconductor component.

Semiconductor component, lighting device and method for producing a semiconductor component

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment, the method includes arranging an optoelectronic semiconductor chip and a reflector on a top side of a carrier film, arranging a potting material in a region between the optoelectronic semiconductor chip and the reflector and forming a molded body, wherein the optoelectronic semiconductor chip, the reflector and the potting material are embedded into the molded body.

Method for producing an optoelectronic component, and optoelectronic component

A method for producing an optoelectronic device comprises steps for providing a package with a first surface and a second surface, wherein an electrically conductive chip carrier is embedded in the package and is accessible at the first surface and at the second surface, and for applying an insulation layer on the second surface of the package by means of aerosol deposition.

Optoelectronic device

The invention relates to an optoelectronic semiconductor component () comprising:&#x2014;an optoelectronic semiconductor chip (), comprising&#x2014;a growth substrate () having a growth surface (),&#x2014;a layer sequence () with a semiconductor layer sequence () with an active zone () grown on the growth surface (),&#x2014;contact points () for electrically contacting the semiconductor layer sequence () and&#x2014;and insulation layer (), which is formed in an electrically insulting manner&#x2014;a connection carrier (), which is mounted to the cover surface () of the optoelectronic semiconductor chip facing away from the growth surface (), wherein&#x2014;the semiconductor layer sequence () is connected to the connection carrier () in an electrically conducting manner and&#x2014;a conversion layer () is applied to a bottom surface () of the growth substrate () facing away from the growth surface () and to all side surfaces () of the growth substrate ().

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 &#x3bc;m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

Growing community of inventors

Lappersdorf, Germany

Juergen Moosburger