Infineon Technologies Ag

Juergen Minichshofer

Ernst Seler

Markus Josef Lang

Andreas Stelzer

Reinhard Feger

Thomas Lampersberger

A radio-frequency device comprises a semiconductor package, which comprises a radio-frequency chip and a radio-frequency antenna. The semiconductor package is designed to be mechanically and electrically connected to a circuit board via at least one connecting element of the semiconductor package, with one surface of the semiconductor package facing the circuit board. The radio-frequency device also comprises a waveguide structure oriented in a direction parallel to the surface of the semiconductor package, the radio-frequency antenna being designed for at least one of the following: to emit radiation into the waveguide structure in the direction parallel to the surface of the semiconductor package, or to receive signals via the waveguide structure in the direction parallel to the surface of the semiconductor package.

Radio-frequency device with radio-frequency chip and waveguide structure

An amplifier circuit includes an amplifier input, an amplifier output, a control terminal for adjusting a gain of the amplifier circuit, and a feedback path between the amplifier output and the control terminal, wherein a variable-impedance means, the impedance of which depends on a temperature so that a variation of the gain depending on the temperature is reduced, is connected in the feedback path.

Amplifier circuit with reduced temperature dependence of the gain

A circuitry comprises an amplifier with a bipolar transistor, whose base terminal is coupled to an input terminal for a signal to be amplified. A biasing means for setting a potential at the base terminal of the bipolar transistor is provided. Further, a means for providing such a current to the base terminal of the bipolar transistor is provided, so that a charging or discharging current to the input terminal is larger than a base current of the bipolar transistor. Further, the circuitry comprises a means for detecting whether a potential change at the base terminal of the bipolar transistor is to be effected for switching the bipolar transistor, and a means for connecting the means for providing the current to the base of the bipolar transistor when a potential change is to be effected at the base terminal of the bipolar transistor.

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Linz, Austria

Juergen Minichshofer