Evonik Degussa Gmbh

Evonik Operations Gmbh

Juergen Erwin Lang

Hartwig Rauleder

Ekkehard Mueh

Imad Moussallem

Rainer Nicolai

Martin Trocha

Reinhold Schork

Nicole Brausch

Hartmut Wiggers

Christof Schulz

Julia Lyubina

Hans Orthner

Jasmina Kovacevic

Janaina Marinas Pérez

A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH, SiHand/or SiHand at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900&#xb0; C. to 1100&#xb0; C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Synthesis of silicon-carbon composite in a gas phase reactor

A controlled preparation of octachlorotrisilane and higher polychlorosilane such as DCTS and DCPS from monomeric chlorosilane, proceeds by exposing the chlorosilane to a nonthermal plasma and recycling chlorosilane that has not been converted to octachlorotrisilane into the plasma.

Process for preparing octachlorotrisilane and higher polychlorosilanes with utilization of hexachlorodisilane

The invention relates to a process and an apparatus for preparation of polychlorosilanes from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma.

Method and device for producing polychlorosilanes

The invention relates to a process for preparing polysilanes by converting monosilane in the presence of hydrogen in a plasma, and to a plant for performing the process.

Process and apparatus for preparation of polysilanes

The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Apparatus for the preparation of silanes

The invention relates to a process and an apparatus for controlled preparation of octachlorotrisilane from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma.

Process and apparatus for preparation of octachlorotrisilane

Hollow bodies having a silicon-comprising shell, are produced by, in a gas comprising at least one silane of the general formula SiHXwith n=1 to 4, m=0 to 2n+2 and X=halogen, (a) generating a non-thermal plasma by an AC voltage of frequency f, or operating a light arc, or introducing electromagnetic energy in the infrared region into the gas, giving a resulting phase which (b) is dispersed in a wetting agent and distilled, and then (c) the distillate is contacted at least once with a mixture of at least two of the substances hydrofluoric acid, nitric acid, water, giving a solid residue comprising hollow bodies having a silicon-comprising shell after the conversion reaction of the distillate with the mixture has abated or ended.

Process for producing hollow silicon bodies

The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.

Process for the preparation of hexachlorodisilane by cleavage of higher polychlorosilanes such as octachlorotrisilane

Method for the preparation of silanes

An apparatus for preparing dimeric and trimeric silicon compounds is provided. The apparatus includes a reactor for generating a nonthermal plasma; a collecting vessel in product flow communication with the nonthermal plasma reactor; and a series of at least three rectification columns in flow communication with the collecting vessel.

Apparatus for preparing dimeric and trimeric silicon compounds

The invention relates to a process for preparing monochlorosilane by reaction of monosilane and dichlorosilane in the presence of a catalyst. In the process of the invention, monochlorosilane is formed by comproportionation of monosilane and dichlorosilane. The invention further relates to the use of the monochlorosilane produced and also a plant for carrying out the process.

Monochlorosilane, process and apparatus for the preparation thereof

The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

Method for producing higher silanes

A reactor and a plant containing the reactor for conducting a continuous, industrial process for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride is provided. The plant contains a plasma reactor having a dielectric, a high voltage electrode and an earthed, metallic heat exchanger, in which the longitudinal axes of the dielectric, of the high-voltage electrode and of the earthed, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

Reactor and plant for the continuous preparation of high-purity silicon tetrachloride or high-purity germanium tetrachloride

A reactor, a plant, and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride by treating the silicon tetrachloride or germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride from the resulting treated phase by fractional distillation. The treatment is carried out in a plasma reactor in which longitudinal axes of a dielectric, of a high-voltage electrode, and of a grounded, metallic heat exchanger are oriented parallel to one another and at the same time parallel to the force vector of gravity.

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Karlsruhe, Germany

Juergen Erwin Lang