Osram Opto Semiconductors Gmbh

Juergen Dachs

Thomas Schwarz

Roland Schulz

Heiko Unold

Frank Singer

Stefan Illek

Roland Enzmann

Tilman Ruegheimer

Markus Horn

Markus Arzberger

Thomas Veit

Markus Graul

Stefan Listl

Michael Kuehnelt

Ulrich Steegmueller

A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.

Method of producing a housing cover, method of producing an optoelectronic component, and optoelectronic component

Method for producing semiconductor laser elements () comprises A) providing a carrier composite () having a plurality of carriers () for the semiconductor laser elements (), B) providing a laser bar () having a plurality of semiconductor laser diodes () which comprise a common growth substrate () and a semiconductor layer sequence () grown thereon, C) generating predetermined breaking points () on a substrate underside () of the growth substrate (), said substrate underside facing away from the semiconductor layer sequence (), D) attaching the laser bar () to a carrier upper side () of the carrier composite (), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (), wherein steps B) to E) are performed in the indicated sequence.

Method for producing semiconductor laser elements and semi-conductor laser element

A semiconductor laser module is disclosed, comprising a module carrier () having a mounting area (), a pump device () arranged on the mounting area (), a surface emitting semiconductor laser () arranged on the mounting area (), and a frequency conversion device () arranged on the mounting area (), wherein the mounting area () of the module carrier () has an area content of at most 100 mm.

Semiconductor laser module

A method for producing a multiplicity of semiconductor lasers () comprising the steps of providing a carrier wafer (), producing an assembly () by applying a multiplicity of semiconductor laser chips () to a top side () of the carrier wafer (), and singulating the assembly () to form a multiplicity of semiconductor lasers (). Each semiconductor laser () comprises a mounting block () and at least one semiconductor laser chip (). Each mounting block () has a mounting area () which runs substantially perpendicular to a top side () of the mounting block (), on which top side the semiconductor laser chip () is arranged. The mounting area () is produced during the singulation of the assembly.

Method for producing a semiconductor laser, and semiconductor laser

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Baar-Ebenhausen, Germany

Juergen Dachs