Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Tsinghua University

Jueinai Kwo

Minghwei Hong

Keng-Yung Lin

Yen-Hsun Lin

Hsien-Wen Wan

Bo-Yu Yang

Kuanhsiung Chen

Chao Kai Cheng

Kuan Chieh Lu

Wei-Chin Lee

Chih-Ping Chen

Ming-Hwei Hong

Shiang-Pi Chang

A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.

Material having single crystal perovskite, device including the same, and manufacturing method thereof

A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4&#xd7;6 reconstruction surface, a 2&#xd7;4 reconstruction surface, a 3&#xd7;2 reconstruction surface, a 2&#xd7;1 reconstruction surface, or a 4&#xd7;4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (YO) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

Single-crystal rare earth oxide grown on III-V compound

A method for forming a semiconductor device includes placing a Si substrate and an ScOpowder source in an oxide chamber, and vaporizing the ScOpowder source in the oxide chamber so as to form a single crystal ScOfilm on the Si substrate through electron beam evaporation techniques.

Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate

Growing community of inventors

Hsinchu, Taiwan

Jueinai Kwo